Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 32 Issue 2
- /
- Pages.83-92
- /
- 1999
- /
- 1225-8024(pISSN)
- /
- 2288-8403(eISSN)
A study of the GaN etch properties using inductively coupled Cl$_2$ -based plasmas
유도 결합형 Cl$_2$ 계 플라즈마를 이용한 GaN 식각 특성에 관한 연구
Abstract
GaN etching was performed using planar inductively coupled
Keywords