• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.498-498
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• 2013

Atmospheric Pressure Plasmas have pioneered a new field of plasma for biomedical application bridging plasma physics and biology. Biological and medical applications of plasmas have attracted considerable attention due to promising applications in medicine such as electro-surgery, dentistry, skin care and sterilization of heat-sensitive medical instruments [1]. Traditional approaches using electronic devices have limits in heating, high voltage shock, and high current shock for patients. It is a great demand for plasma medical industrial acceptance that the plasma generation device should be compact, inexpensive, and safe for patients. Microwave-excited micro-plasma has the highest feasibility compared with other types of plasma sources since it has the advantages of low power, low voltage, safety from high-voltage shock, electromagnetic compatibility, and long lifetime due to the low energy of striking ions [2]. Recent experiment [2] shows three-log reduction within 180-s treatment of S. mutans with a low-power palm-size microwave power module for biomedical application. Experiments using microwave plasma are discussed. This low-power palm-size microwave power module board includes a power amplifier (PA) chip, a phase locked loop (PLL) chip, and an impedance matching network. As it has been a success, more compact-size module is needed for the portability of microwave devices and for the various medical applications of microwave plasma source. For the plasma generator, a 1.35-GHz coaxial transmission line resonator (CTLR) [3] is used. The way of reducing the size and enhancing the performances of the module is examined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.74-76
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• 2006

An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the ear1y stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significant1y affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.75-78
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• 2006

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainlyon its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, an EEFL presented the possibility of using it as a light source for backlights. However, because an EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verifies the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL frequency and brightness by measuring the optical. characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.396-399
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• 2002

Intense quasi-monochromatic x-ray irradiation from the linear plasma target is described. The plasma x-ray generator employs a high-voltage power supply, a low-impedance coaxial transmission line, a high-voltage condenser with a capacity of about 200 nF, a turbo-molecular pump, a thyristor pulse generator as a trigger device, and a flash x-ray tube. The high-voltage main condenser is charged up to 55 kV by the power supply, and the electric charges in the condenser are discharged to the tube after triggering the cathode electrode. The x-ray tube is of a demountable triode that is connected to the turbo molecular pump with a pressure of approximately 1 mPa. As electron flows from the cathode electrode are roughly converged to the molybdenum target by the electric field in the tube, the weakly ionized plasma, which consists of metal ions and electrons, forms by the target evaporating. In the present work, the peak tube voltage was almost equal to the initial charging voltage of the main condenser, and the peak current was about 20 kA with a charging voltage of 55 kV. When the charging voltage was increased, the linear plasma x-ray source grew, and the characteristic x-ray intensities of K-series lines increased. The quite sharp lines such as hard x-ray lasers were clearly observed. The quasi-monochromatic radiography was performed by a new film-less computed radiography system.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.223-225
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• 2005

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, an EEFL presented the possibility of using it as a light source for backlights. However, because an EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verifies the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.355-360
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• 2007

The recent TFT-LCD Trend that is done large size gradually. As size of monitor great, though problem happens, it is that consumer's request which it makes monitor combined TV function. Monitor and TV are no difference externally greatly, but define difference happens as for backlight. An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high Luminance using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and Luminance by measuring the optical characteristics.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.19-26
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• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.