• Tuberculosis and Respiratory Diseases
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• 제63권5호
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• pp.449-453
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• 2007

항암제 치료 등을 위해서 피하매몰 중심정맥포트를 유치한 환자에서 도관 골절 및 원위부의 색전증은 드물게 발생하는 합병증으로 일반적인 경우는 경피적으로 도관의 제거가 가능하나, 임상의사들이 미리 이러한 합병증을 예측할 수 있는 임상적 및 방사선학적인 소견을 인지하고 조기에 발견하여 올바른 처치를 하는 것이 중요하며, 이러한 합병증을 예방하기 위한 방법 등에 대해서 숙지하는 것이 필요하다.

• 전기전자학회논문지
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• 제22권2호
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• pp.484-487
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• 2018

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

• 대한전자공학회논문지
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• 제14권3호
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• pp.6-11
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• 1977

GaAs Schottky Barrier Gate 전계효과트랜지스터의 잡음동작을 잡음등가회로를 사용하여 연구하였으며, 부가구인 잡음근원은 pinch-off영역에서 GaAs FET bias에 의하여 구현되었다. 이것이 바로 intervalley 산란잡음과 hot electron에 의한 잡음이었다. 본 논문의 잡음등가회로에서는 carrier의 포화속도와 기생저항의 영향을 고려한 parameter를 정하였다.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2008년도 추계학술대회
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• pp.659-667
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• 2008

The LNG carriers have been propelled by steam turbines and the LNG boil-off(BOG) has been used as fuel or vented. However, as the alternative propulsion systems such as diesel engines are being equipped on the LNG carriers for better fuel efficiency, a need for the LNG BOG re-liquefaction system that liquefies the BOG and sends the liquid BOG back to the LNG cargo has arisen in recent years. This study investigates the design of the BOG re-liquefaction system based on the reverse Brayton refrigeration cycle. The thermodynamic and heat exchanger analysis are carried out and the limitations to the system performance are discussed.

• Journal of Advanced Marine Engineering and Technology
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• 제32권8호
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.723-726
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• 2012

A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch-off current of 8.82 mA and 11.56 mA were obtained for small and large cell in the CLD chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V. Measured knee voltage, $V_k$ were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0 mA of current was obtained. The pinch-off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.

• 전자공학회논문지
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• 제54권5호
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• pp.11-16
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• 2017

RF MOSFET에서 관찰된 입력 저항의 주파수 종속 특성이 단순화된 입력 등가회로로부터 유도된 pole과 zero 주파수 수식을 사용하여 자세히 분석되었다. 이러한 이론적 분석을 사용하여 저주파에서 입력저항의 감소현상이 포화영역에서 소스와 pinch-off 영역 사이의 채널저항으로부터 발생되는 것을 발견하였다. 이와 같이 저주파에서 입력저항이 감소하는 채널 저항 효과는 채널저항을 변화시키면서 소신호 등가회로 모델링을 수행하여 물리적으로 입증되었다.

• Korea-Australia Rheology Journal
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• 제18권2호
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• pp.41-49
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• 2006

A modified Volume-of-Fluid (VOF) numerical method is used to predict the dynamics of a liquid drop of a low viscosity dilute polymer solution, forming in air from a circular nozzle. Viscoelastic effects are rep-resented using an Oldroyd-B model. Predicted drop shapes are compared with experimental observations. The main features, including the timing of the shape evolution and the 'bead-on-a-string' effect, are well reproduced by the simulations. The results confirm published conclusions of the third author, that the deformation is effectively Newtonian until near the time of Newtonian pinch-off and that the elastic stress becomes large in the pinch region due to the higher extensional flow there.

• Korea-Australia Rheology Journal
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• 제21권4호
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• pp.269-280
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• 2009

The drop formation dynamics of a shear thinning, elastic, yield stress ($\tau_o$) fluid (Carbopol 980 (poly(acrylic acid)) dispersions) in silicone oil has been investigated in a flow-focusing microfluidic channel. The rheological character of each solution investigated varied from Netwonian-like through to highly non-Newtonian and was varied by changing the degree of neutralization along the poly (acrylic acid) backbone. We have observed that the drop size of these non-Newtonian fluids (regardless of the degree of neutralisation) showed bimodal behaviour. At first we observed increases in drop size with increasing viscosity ratio (viscosity ratio=viscosity of dispersed phase (DP)/viscosity of continuous phase (CP)) at low flowrates of the continuous phases, and thereafter, decreasing drop sizes as the flow rate of the CP increases past a critical value. Only at the onset of pinching and during the high extensional deformation during pinch-off of a drop are any differences in the non-Newtonian characteristics of these fluids, that is extents of shear thinning, elasticity and yield stress ($\tau_o$), apparent. Changes in these break-off dynamics resulted in the observed differences in the number and size distribution of secondary drops during pinch-off for both fluid classes, Newtonian-like and non-Newtonian fluids. In the case of the Newtonian-like drops, a secondary drop was generated by the onset of necking and breakup at both ends of the filament, akin to end-pinching behavior. This pinch-off behavior was observed to be unaffected by changes in viscosity ratio, over the range explored. Meanwhile, in the case of the non-Newtonian solutions, discrete differences in behaviour were observed, believed to be attributable to each of the non-Newtonian properties of shear thinning, elasticity and yield stress. The presence of a yield stress ($\tau_o$), when coupled with slow flow rates or low viscosities of the CP, reduced the drop size compared to the Newtonian-like Carbopol dispersions of much lower viscosity. The presence of shear thinning resulted in a rapid necking event post onset, a decrease in primary droplet size and, in some cases, an increase in the rate of drop production. The presence of elasticity during the extensional flow imposed by the necking event allowed for the extended maintenance of the filament, as observed previously for dilute solutions of linear polymers during drop break-up.

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.21-28
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• 2008

본 논문에서는 단 채널 GaAs MESFET의 포화영역에서의 I-V 특성을 도출하기 위한 해석적 모델을 제안하였다. 기존의 단 채널 GaAs MESFET에 대한 해석이 채널 pinch-off의 개념이 도입되는 모델이었던 반면, 본 논문에서는 저자의 소도 포화 영역이 유한한 채널 폭을 갖으면서 전류 연속 조건을 만족하도록 공핍영역의 2차원 전위 분포 식을 도출하였다. 또한 소도 포화영역의 길이를 채널 전체 길이, 채널 도핑 농도, 게이트 전압 및 드레인 전압의 함수로 도출하여 포화영역에서의 Early 효과를 보다 합리적으로 설명할 수 있음을 보이고 있다.