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An analytical model for deriving the 2-D potential in the velocity saturation region of a short channel GaAs MESFET  

Oh, Young-Hae (School of Electronic & Electrical Eng., Hongik Univ.)
Jang, Eun-Sung (School of Electronic & Electrical Eng., Hongik Univ.)
Yang, Jin-Seok (School of Electronic & Electrical Eng., Hongik Univ.)
Choi, Soo-Hong (School of Electronic & Electrical Eng., Hongik Univ.)
Kal, Jin-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Han, Won-Jin (School of Electronic & Electrical Eng., Hongik Univ.)
Hong, Sun-Suck (Dep. of Electronic & Electrical Eng., Hongik Univ.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.11, 2008 , pp. 21-28 More about this Journal
Abstract
In this paper, we suggest an analytical model that can derive the I-V characteristics in the saturation region of a short channel GaAs MESFET. Instead of the pinch-off concept that has been used in the conventional models we can derive the two-dimensional potential in the depletion region in order that the velocity saturation region cannot be pinched-off and the current continuity condition can be satisfied. Obtained expression for the velocity saturation length is expressed in terms of the total channel length, channel doping density, gate voltage, and drain voltage. Compared with the conventional channel length shortening models, the present model seems to be considerably accurate and more reasonable in explaining the Early effect.
Keywords
short channel GaAs MESFET; Early Effect;
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Times Cited By KSCI : 2  (Citation Analysis)
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