• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of The Korean Astronomical Society
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• v.36 no.spc1
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• pp.93-99
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• 2003

Various attempts have been made to explain the: pronounced seasonal and universal time (UT) variations of geomagnetic indices. As one of such attempts, we analyze the hourly-averaged auroral electroject indices obtained during the past 20 years. The AU and AL indices maximize during summer and equinoctial months, respectively. By normalizing the contribution of the solar conductivity enhancement to the AU index, or to the eastward electrojet, it is found that the AU also follows the same semiannual variation pattern of the AL index, suggesting that the electric field is the main modulator of the semiannual magnetic variation. The fact that the variation pattern of the yearly-mean AU index follows the mirror image of the AL index provides another indication that the electric field is the main modulator of magnetic disturbance. The pronounced UT variations of the auroral electrojet indices are also noted. To determine the magnetic activity dependence, the probability of recording a given activity level of AU and AL during each UT is examined. The UT variation of the AL index, thus obtained, shows a maximum at around 1200-1800 UT and a minimum around 0000-0800 UT particularly during winter. It is closely associated with the rotation of the geomagnetic pole around the rotational axis, which results in the change of the solar-originated ionospheric conductivity distribution over the polar region. On the other hand the UT variation is prominent during disturbed periods, indicating that the latitudinal mismatch between the AE stations and the auroral electrojet belt is responsible for it. Although not as prominent as the AL index, the probability distribution of the AU also shows two UT peaks. We confirm that the Dst index shows more prominent seasonal variation than the AE indices. However, the UT variation of the Dst index is only noticeable during the main phase of a magnetic storm. It is a combined result of the uneven distribution of the Dst stations and frequent developments of the partial ring current and substorm wedge current preferentially during the main phase.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.589-593
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• 2002

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.7-15
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• 2002

The digital DBS tuner is designed and implemented in a CMOS process using a direct-conversion architecture that offers a high degree of integration. To generate mathched LO I/Q quadrature signals covering the total input frequency range, a fully integrated ring oscillator is employed. And, to decrease a high level of phase noise of the ring oscillator, a frequency synthesizer is designed using a double loop strucure. This paper proposes and verifies a band selective loop for fast frequency switching time of the double loop frequency synthesizer. The down-conversion mixer with source follower input stages is used for low voltage operation. An experiment implementation of the frequency synthesizer and mixer with integrated a 0.25um CMOS process achieves a switching time of 600us when frequency changes from 950 to 2150MHz. And, the experiment results show a quadrature amplitude mismatch of max. 0.06dB and a quadrature phase mismathc of max. >$3.4^{\circ}$.

• Journal of Institute of Control, Robotics and Systems
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• v.21 no.10
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• pp.910-916
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• 2015

A sensorless motor control scheme with conventional back-Electro Motive Force (EMF) sensing based on zero crossing point (ZCP) detection has been widely used in various applications. However, there are several problems with the conventional method for effectively driving sensorless brushless motors. For example, a phase mismatch of 30 degrees occurs between the ZCP and commutation time. Additionally, most of the motor speed/current controls are achieved based on a pulse width modulation (PWM) method, which generates significant noise that distracts the back-EMF sensing. Due to the PWM switching, the ZCP is not deterministic, and thus the efficiency of the motor is reduced because the phase transition points become uncertain. Moreover, the motor driving performance is degraded at a low speed range due to the effect of PWM noise. To solve these problems, an improved back-EMF detection method based on a differential line method is proposed in this paper. In addition, the proposed sensorless BLDC driver addresses the problems by using a variable voltage driver generated from a buck converter. The variable voltage driver does not generate the PWM switching noise. Consequently, the proposed sensorless motor driver improves 1) the signal-to-noise ratio of back-EMF, 2) the operation range of a BLDC motor, and 3) the torque characteristics. The proposed sensorless motor driver is verified through simulations and experiments.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.672-676
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• 2003

The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.860-866
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• 2016

An injection-locked ring phase-locked loop (ILRPLL) using a charge-stored complementary switch (CSCS) injection technique is described in this paper. The ILRPLL exhibits a wider lock range compared to other conventional ILRPLLs, owing to the improvement of the injection effect by the proposed CSCS. A frequency calibration loop and a device mismatch calibration loop force the frequency error to be zero to minimize jitter and reference spur. The prototype chip fabricated in 65-nm CMOS technology achieves a $285-fs_{rms}$ integrated jitter at GHz from the reference clock of 52 MHz while consuming 7.16 mW. The figure-of-merit of the ILRPLL is -242.4 dB.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.200-210
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• 2009

It is necessary to minimize the mismatch of sintering shrinkage between dielectric ceramic and Ni inner electrode layers for the purpose of developing the ultra high-capacity multi layered ceramic condenser(MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the influence of the milling condition on sintering behavior and electrical properties of $BaTiO_3$ ceramics was investigated in the $BaTiO_3$(BT)-Mg-Dy-Mn-Ba system with borosilicate glass as a sintering agent. As milling time increased, specific surface area(SSA) of the powder increased linearly, while both sinterability and dielectric property were found to be drastically decreased with an increasing SSA. It was also revealed that the sinterability of the excessively milled $BaTiO_3$ ceramics could be recovered by increasing Ba content, rather than increasing glass addition. These results suggest that the sintering behavior of $BaTiO_3$ ceramics under the high SSA was more strongly dependent on the transient liquid phase caused by Ba addition, than the liquid phase from additional glass.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.120-123
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• 2005

The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.