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http://dx.doi.org/10.4191/KCERS.2003.40.7.672

Growth and Characteristics of YIG, Bi:YIG, TbBi:YIG Single Crystal Thick Films  

윤석규 (성균관대학교 신소재공학과)
김근영 (성균관대학교 신소재공학과)
김명진 (전자부품연구원 광부품연구센터)
이형만 (전자부품연구원 광부품연구센터)
김회경 (전자부품연구원 광부품연구센터)
윤대호 (성균관대학교 신소재공학과)
Publication Information
Abstract
The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).
Keywords
Garnet; Bi; TbBi:YIG; LPE; SGGG;
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Times Cited By KSCI : 1  (Citation Analysis)
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