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http://dx.doi.org/10.4191/KCERS.2002.39.6.589

Growth of Bi:YIG Thick Films by Change of PO/Bi2O3 Molar Ratio  

윤석규 (성균관대학교 신소재공학과)
김근영 (성균관대학교 신소재공학과)
김용탁 (성균관대학교 신소재공학과)
정현민 (삼성코닝(주) 연구소 광소자 연구실)
임영민 (전자부품연구원 광부품연구센터)
윤대호 (성균관대학교 신소재공학과)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.6, 2002 , pp. 589-593 More about this Journal
Abstract
The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.
Keywords
Garnet; Bi:YIG; LPE; PO/$Bi_2$$O_3$; SGGG;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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