• 제목/요약/키워드: perovskites

검색결과 100건 처리시간 0.027초

Polymer Passivation Effect on Methylammonium Lead Halide Perovskite Photodetectors

  • Kim, Hyojung;Byun, Hye Ryung;Kim, Bora;Kim, Sung Hyuk;Oh, Hye Min;Jeong, Mun Seok
    • Journal of the Korean Physical Society
    • /
    • 제73권11호
    • /
    • pp.1675-1678
    • /
    • 2018
  • Methylammonium lead halide ($MAPbI_3$) perovskites are considered as promising materials owing to their excellent optical and electrical properties. However, perovskite materials suffer from degradation in air, which limits their practical applications. Here, we demonstrate successful passivation of the $MAPbI_3$ photodetectors through monochloro-para-xylylene (Parylene-C) deposition. The time-dependent photocurrent characteristics were systematically investigated, and we achieved significantly improved device performance and stability with Parylene-C passivation. Based on the excitation-power-dependent photoluminescence (PL) data, we confirmed that Parylene-C can reduce the carrier losses in $MAPbI_3$, leading to the enhancement of photocurrent and PL in $MAPbI_3$ photodetectors.

광 시냅스 및 뉴로모픽 소자 기술 (Recent Progress of Light-Stimulated Synapse and Neuromorphic Devices)

  • 송승호;김지훈;김영훈
    • 한국전기전자재료학회논문지
    • /
    • 제35권3호
    • /
    • pp.215-222
    • /
    • 2022
  • Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

본연적 신축성을 갖는 발광 다이오드 개발 동향 (Advances in Intrinsically Stretchable Light-Emitting Diodes)

  • 고원진;최문기
    • 한국전기전자재료학회논문지
    • /
    • 제36권6호
    • /
    • pp.537-546
    • /
    • 2023
  • Intrinsically stretchable light-emitting diodes, composed of stretchable electrodes, charge transport layers, and luminescent materials, have garnered significant interest for enhancing human well-being and advancing the field of deformable electronics. Various luminescent materials, such as perovskites and organics, have been integrated with stretchable elastomers to function as the stretchable emissive layers in these intrinsically stretchable LEDs. Stretchable conductors including Ag nanowire based percolating structures and conducting polymers have been utilized as stretchable transparent electrode. Despite this progress, their performances in terms of efficiency and stability remain challenging compared to their structurally stretchable and rigid LED counterparts. This review offers a comprehensive overview of recent advancements in intrinsically stretchable LEDs, focusing on material innovations.

은(Ag) 나노입자가 코팅된 페롭스카이트 La0.7Sr0.3Co0.3Fe0.7O3-δ의 Mössbauer 분광연구 (Mössbauer Study of Silver Nanoparticle Coated Perovskites La0.7Sr0.3Co0.3Fe0.7O3-δ (LSCF))

  • 엄영랑;이창규;김철성
    • 한국자기학회지
    • /
    • 제22권2호
    • /
    • pp.37-41
    • /
    • 2012
  • DC 스퍼터를 이용하여 은(Ag) 나노입자를 입도 0.2~3 ${\mu}m$ 크기를 갖는 페롭스카이트(Perovskite) $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$(LSCF) 입자 표면에 코팅하여 복합재를 제조하였다. 제조된 LSCF/Ag 복합재에서 Ag 나노입자는 수 나노입자 크기로 형성되었으며 Ar가스 분위기에서 $800^{\circ}C$ 열처리 후에도 Ag입자가 응집되는 현상이 없어 안정적으로 증착되었음을 확인하였다. LSCF 표면에 Ag나노입자 코팅양이 2.11 wt.%까지 증가함에 따라 Fourier Transform Infrared Spectroscopy(FT-IR) 분광기의 파수가 크게 변하여 강한 결합이 형성되어 있으며, Ag 코팅 전후 결정 구조의 변화는 없으나 M$\ddot{o}$ssbauer 분광 분석으로 확인한 결과 $Fe^{4+}$ 이온이 감소하면서 $Fe^{3+}$ 이온이 증가하여 LSCF의 전자 가에 변화가 생김을 확인 할 수 있었다.

ATi$O_3$단순 페롭스카이트의 결함구조 (Defect Chemistry in Simple ATi$O_3$Perovskite Ceramics)

  • 한영호
    • 한국재료학회지
    • /
    • 제2권4호
    • /
    • pp.248-256
    • /
    • 1992
  • 본 논문에서는 ATi$O_3$(A=Ca, Sr, Ba) 조성을 갖는 단순 페롭스카이트 구조에서 생성되는 격자결함 구조에 대하여 고찰하였다. 페롭스카이트 구조는 고충전밀도를 갖기 때문에 프렌클 결함은 고려되지 않았다. 쇼트키결함이나, 고유전자결함도 자연적으로 포함된 억셉타 불순물 농도에 비하면 무시할 정도로 적은 양이다. 실제적으로 전기적 특성에 영향을 주는 것은 전하적 결함을 발생하는 aliovalent 불순물이다. 삼성분계이기 때문에 양이온간의 비화학양론이 발생하며 BaTi$O_3$나 SrTi$O_3$에서 수백 ppm이내의 AO나 Ti$O_2$의 용해도가 관찰되나, CaTi$O_3$에서는 상당량의 CaO와 $TiO_2의$ 용해가 가능하다.

  • PDF

Reinvestigation of Dion-Jacobson Phases CsCa2Nb2MO9 (M = Fe and Al)

  • Hong, Young-Sik
    • Bulletin of the Korean Chemical Society
    • /
    • 제27권6호
    • /
    • pp.853-856
    • /
    • 2006
  • Dion-Jacobson phases $CsCa_2Nb_2FeO_9$ and $CsCa_2Nb_2AlO_9$ were reinvestigated by the Rietveld analysis of powder X-ray diffraction (XRD) method, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). These nominal compounds, previously known as the oxygen-deficient layered perovskites with the sequences of $NbO_6-MO_4-NbO_6$ in tripled slab, in fact, were mixed phases of n = 3 Dion-Jacobson phases and impurities such as $Ca_2NbFeO_6$ and $Ca_3Al_2O_6$. The difference of morphology and chemical in-homogeneity between Dion-Jacobson phases and impurities could be clearly identified by scanning electron microscopy with energy-dispersive X-ray spectroscopy. The chemical composition of $CsCa_2Nb_2FeO_9$ was calculated into $Cs_{0.59}Ca_{2.64}Nb_{2.92}Fe_{0.81}$ in small agglomerate crystals and $Cs_{0.95}Ca_{1.97}Nb_{3.08}Fe_{0.15}$ in long plate-like crystals.

Synthesis of Semiconducting $KTaO_3$ Thin films

  • Bae, Hyung-Jin;Ku, Jayl;Ahn, Tae-Won;Lee, Won-Seok
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2005년도 추계종합학술대회
    • /
    • pp.1265-1268
    • /
    • 2005
  • In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

  • PDF

Structural Distortions and Electrical Properties of Magnetoelectric Layered Perovskites: $Bi_4Ti_3O_{}12.nBiFeO_3$(n=1&2)

  • Ko, Taegyung;Bang, Gyusuk;Shin, Jungmuk
    • The Korean Journal of Ceramics
    • /
    • 제4권2호
    • /
    • pp.83-89
    • /
    • 1998
  • The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

  • PDF

친환경 Pb-Free 페로브스카이트 태양전지를 위한 비스무스 기반의 무기 박막 최적화 연구 (Optimization of Bismuth-Based Inorganic Thin Films for Eco-Friend, Pb-Free Perovskite Solar Cells)

  • 서예진;강동원
    • 한국전기전자재료학회논문지
    • /
    • 제31권2호
    • /
    • pp.117-121
    • /
    • 2018
  • Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, $AgBi_2I_7$ perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance $AgBi_2I_7$ perovskite solar cells for applications in Pb-free energy conversion devices.

저온 작동형 SOFC Lanthanum Ferrite계 공기극 소재의 전기적 특성 (Electrical Properties of the Lanthanum Ferrite-Based Cathode Materials for Low-Temperature SOFCs)

  • 강주현;최정운;심한별;유광수
    • 한국세라믹학회지
    • /
    • 제43권3호
    • /
    • pp.162-168
    • /
    • 2006
  • The perovskites with nominal compositions $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were fabricated by a solid-state reaction method as cathode materials of low-temperature operating Solid Oxide Fuel Cells (SOFCs). X-ray diffraction analysis and microstructure observation for the sintered samples were performed. The ac complex impedance were measured in the temperature range $600-900^{\circ}C$ in air and fitted with a Solatron ZView program. The electrical conductivity and polarization resistance of $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were characterized systematically. The porosities of the sintered samples were in the range of 25% to 38%. The polarization resistance of $La_{0.8}Sr_{0.2}Fe_{0.7}M_{0.3}O_3$ was $0.291{\Omega}cm^2\;at\;700^{\circ}C$.