• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.25-29
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• 2015

저가격, 높은 생산성, 고해상도를 가지는 소자의 패턴 제작 방법에 대한 요구가 계속적으로 증가하고 있다. 롤투롤 연속생산 공정은 저비용, 대량생산이 가능한 차세대 공정으로 각광받고 있다. 본 논문에서는 PLC (planar lightwave circuit) 소자의 제작을 위해서 롤투롤 공정을 이용하여 제조하는 방법을 연구하였다. 제안한 기술은 polydimethylsiloxane (PDMS) 고분자를 이용하여 롤투롤 공정을 통해 PLC소자를 제작하는 공정을 연구하였다. 실리콘 웨이퍼에 형성된 마이크로 패턴을 복제 공정을 수행하였으며 이를 원통금형에 적용하여 롤투롤 공정의 롤 몰드(roll mold)로 사용하였다. 웹 텐션과 웹 속도의 공정 조건 최적화로 롤투롤 공정을 이용하여 PLC소자를 제작하였다. 제작된 PLC소자는 약4.0dB의 삽입손실을 가지는 $1{\times}2$ 광분배기이며, 제안한 롤투롤 공정 기술을 이용한 PLC소자의 제작 공정이 대량연속생산에 유효함을 확인하였다.

• 대한기계학회논문집B
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• 제36권11호
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• pp.1135-1140
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• 2012

마스크를 이용하여 니켈 시드층의 형성 후 실버 도금을 통해 태양전지 상부전극을 형성하는 2 단계 전극형성 공정이 태양전지의 고효율화 방안으로 제안되었다. 본 연구에서는, 자외선 경화형 혹은 상변화 잉크를 고비용의 인쇄공정을 통해 마스크를 형성하는 방법을 대신하여, 코팅과 레이저의 복합공정을 통해 마스크를 형성하는 방법에 대해 제안하도록 한다. 마스크를 형성하는 물질로서 저비용의 저융점 왁스 혹은 플루오르카본 용액을 태양전지 웨이퍼 상에 코팅 후 레이저로 선택적으로 제거하여 전극패턴을 형성하였으며, 플루오르카본 용액 코팅이 왁스 코팅보다 패턴 균일도 측면에서 우수할 뿐만 아니라 통계적으로 0.16% 태양전지 효율증대를 유발한다는 점이 발견되었다.

• 대한기계학회논문집A
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• 제37권4호
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• pp.467-473
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• 2013

본 연구에서는 SU-8 박막의 마이크로시스템으로의 트라이볼로지적 응용을 목적으로 하여, 원자간 힘 현미경(AFM) 과 콜로이드 프로브를 이용한 실험 및 유한요소해석 기법을 이용하여 SU-8 코팅층의 두께에 따른 트라이볼로지적 특성을 고찰하였다. SU-8 시편은 스핀 코팅기법을 이용하여 두께를 다르게하여 제작하였다. 실험결과 코팅두께가 증가함에 따라 마찰력과 점착력이 감소하여 박막두께에 따른 차이가 존재함을 알 수 있었고, SU-8 표면이 Si 표면에서보다 더 낮은 점착력과 마찰력을 보여주었다. 또한, 시뮬레이션을 통해 두께별로 박막 파손을 유발시키는 임계하중(압력)이 존재하며, 본 연구에서의 200~800 nm 두께범위에서는 1.2~1.8 GPa 로 측정되었다.

• Journal of Microbiology and Biotechnology
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• 제25권3호
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• pp.381-385
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• 2015

In the present study, drop-on-demand two-dimensional patterning of unstained and stained bacterial cells on untreated clean wafers was newly conducted using an electrospray pulsed jet. We produced various spotted patterns of the cells on a silicon wafer by varying the experimental conditions, such as the frequency, flow rate, and translational speed of the electrospray system in a two-dimensional manner. Specifically, the electrospray's pulsed jet of cell solutions produced alphabetical patterns consisting of spots with a diameter of approximately $10{\mu}m$, each of which contained a single or a small number of viable bacteria. We tested the viability of the patterned cells using two visualization methods. This pattering technique is newly tested here and it has the potential to be applied in a variety of cell biology experiments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국산학기술학회논문지
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• 제5권3호
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• pp.197-203
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• 2004

나노미터 크기의 임의형상 패턴을 새기기 위하여 노광기술이 사용된다. 광노광에서 자외선과 엑스레이 같은 전자기파가 나노미터 크기로 형상을 새긴 마스크 위에 조사되면 회절현상은 필연적으로 발생하며 마스크의 상이 불명확하게 웨이퍼 위에 맺히도록 한다. 볼록렌즈만이 프리어변환기 역할을 한다고 알려져 있으며 마스크 위에 패턴의 크기가 전자기파의 파장에 비교하여 매우 클 때에도 볼록렌즈를 사용하면 프리어변환시키는 것이 가능하다. 본 논문에서 설명하는 방법으로 마스크를 준비하여 렌즈 앞에 놓고 레이저 빔으로 조사하면 프리어 평면이라 알려진 평면 위에서만 나노미터 크기의 패턴이 형성된다. 이 방법은 매우 단순한 장치로 구성되어 있고, 현재 혹은 차세대 노광인 자외선/극자외선 및 전자투사노광으로 제작한 최소선폭과 비교해 볼 때 손색이 없다. 여기서는 프리어광학을 이용하여 이론적인 연구결과를 보이고 있지만 가까운 장래에 실험결과로 이론적인 접근을 증명할 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.803-808
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• 2016

In this work, one dimension $In_2O_3$ nanostructures as detecting materials for indoor toxic gases were synthesized by an electrospinning process. The morphology of electrospun $In_2O_3$ nanofibers was controlled by electrolyte composition, applied voltage and working distance between a nozzle and a substrate. The synthesized $In_2O_3$ nanofibers-based paste with/without carbon black additives was prepared for the integration on a sensor device. The integration of $In_2O_3$ sensing materials was conducted by a hand-printing of the paste into the interdigit Au electrodes patterned on Si wafer. Gas sensing properties on CO and HCHO gases were characterized at $300^{\circ}C$. The evaluated sensing properties such as sensitivity, response time and recovery time were improved in $In_2O_3$ nanofiber pastes with carbon black, compared to the paste without carbon black.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.