• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.5
• /
• pp.365-371
• /
• 2019

This study shows the feasibility of the parameter of the 1st RC parallel equivalent circuit as a factor of the heat generation of lithium-ion cell. The internal resistance of a lithium-ion cell consists of ohmic and polarization resistances. The internal resistances at various SOCs of the lithium-ion cell are obtained via an electrical characteristic test. The internal resistance is inversely obtained through the amount of heat generated during the experiment. By comparing the resistances obtained using the two methods, the summation of ohmic and polarization resistances is identified as the heating factor of lithium-ion battery. Finally, the amounts of heat generated from the 2C, 3C, and 4C-rate discharge experiments and the COMSOL multiphysics simulation using the summation of ohmic and polarization resistances as the heating parameter are compared. The comparison shows the feasibility of the electrical parameters of the 1st RC parallel equivalent circuit as the heating factor.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.2
• /
• pp.103-111
• /
• 2014

This paper investigates the output powers of PV modules by predicting three unknown parameters: reverse saturation current, and series and shunt resistances. A theoretical model using the non-uniform physical parameters of solar cells, including the temperature coefficients, voltage, current, series and shunt resistances, is proposed to obtain the I-V characteristics of PV modules. The solar irradiation effect is included in the model to improve the accuracy of the output power. Analytical and Newton methods are implemented in MATLAB to calculate a module output. Experimental data of the non-uniform solar cells for both serial and parallel connections are used to extend the implementation of the model based on the I-V equation of the equivalent circuit of the cells and to extend the application of the model to m by n modules configuration. Moreover, the theoretical model incorporates, for the first time, the variations of series and shunt resistances, reverse saturation current and irradiation for easy implementation in real power generation. Finally, this model can be useful in predicting the degradation of a PV system because of evaluating the variations of series and shunt resistances, which are critical in the reliability analysis of PV power generation.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2166-2172
• /
• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Steel and Composite Structures
• /
• v.38 no.5
• /
• pp.547-562
• /
• 2021

This paper aims to explore the mechanical behavior and moment-rotation model of blind bolted joints between concrete-filled double skin steel tubular columns and steel-concrete composite beams. For this type of joint, the inner tube and sandwiched concrete were additionally identified as basic components compared with CFST blind bolted joint. A modified moment-rotation model for this type of connection was developed, of which the compatibility condition and mechanical equilibrium were employed to determine the internal forces of basic components and neutral axis. Following this, load transfer mechanism among the inner tube, sandwiched concrete and outer tube was discussed to assert the action area of the components. Subsequently, assembly processes of basic coefficients in terms of their stiffness and resistances based on the component method by simplifying them as assemblages of springs in series or in parallel. Finally, an experimental investigation on four substructure joints with CFDST columns for validation purposes was carried out to capture the connection details. The predicted results derived from the mechanical models coincided well with the experimental results. It is demonstrated that the proposed mechanical model is capable of evaluating the complete moment-rotation relationships of blind bolted CFDST column composite connections.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.506-508
• /
• 2008

In this work, we used impedance spectroscopy analysis to determine the effect of the $HfO_X$ treatment on the surface of ITO and to model the equivalent circuit for OLEDs. Devices with an ITO/Organic material/Al structure can be modeled as resistances and capacitances arranged in parallel or in series. The number of elements depends on the composition of the structure, essentially the number of layers, and the contacts.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.10
• /
• pp.67-75
• /
• 2013

In this paper, an analytical model is presented for the source/drain parasitic resistance of FinFET. The parasitic resistance is a important part of a total resistance in FinFET because of current flow through the narrow fin. The model incorporates the contribution of contact and spreading resistances considering three-dimensional current flow. The contact resistance is modeled taking into account the current flow and parallel connection of dividing parts. The spreading resistance is modeled by difference between wide and narrow and using integral. We show excellent agreement between our model and simulation which is conducted by Raphael, 3D numerical field solver. It is possible to improve the accuracy of compact model such as BSIM-CMG using the proposed model.

• Geophysics and Geophysical Exploration
• /
• v.7 no.2
• /
• pp.130-135
• /
• 2004

This paper describes the physical properties of the factors controlling the electrical resistivity of the subsurface. Resistivities of various types of soil and rock samples saturated with sodium chloride solutions having nine different concentrations were measured, and the measured resistivities of these samples were compared with calculated resistivities obtained using the conventional empirical formulas. From the results obtained, we observed that the resistivity of the soil and rock samples increases with increasing in pore-fluids resistivity regardless of the media type. However, between 20 and 200 ohm-m, which is the normal range of resistivity of groundwater, the resistivity of the pore-fluids have little or no effect on the resistivities of the samples used. Below 10 ohm-m, the resistivities of the samples are mainly controlled by the pore-fluids, whereas, in the normal range of resistivity of groundwater, the sample resistivities are controlled by their intrinsic matrix resistivity more than by the pore-fluids resistivity. Also, the measured resistivity of rock and soil samples having more than $20\%$ clay contents showed a good agreement with the calculated resistivity using the parallel resistance model whereas, the calculated resistivities of glass beads correlate with that obtained using Archie's formula. When the pore-fluid resistivity is high, the computation of the resistivity values of the samples using the Archie's formula could not be carried out. Through this study, we were able to confirm that the tests are only applicable to the parallel resistance model considering the intrinsic matrix resistivity within the normal resistivity range of groundwater in the subsurface.

• Tribology and Lubricants
• /
• v.35 no.1
• /
• pp.16-23
• /
• 2019

In this study, we aim to analyze the effects of both contact layer properties and surface roughness on contact resistance. The contact has a great influence on performance in terms of electrical conduction and heat transfer. The two biggest factors determining contact resistance are the presence of surface roughness and the surface layer. For this reason we calculated the contact resistance by considering both factors simultaneously. The model of this study to calculate contact resistance is as follows. First, the three representative surface parameters for the GW model are obtained by Nayak's random process. Then, the apparent contact area, real contact area, and contact number of asperities are calculated using the GW model with the surface parameters. The contact resistance of a single surface layer is calculated using Mikic's constriction equation. The total contact resistance is approximated by the parallel connection between the same asperity contact resistances. The results of this study are as follows. The appropriate thickness with reduction effect for contact resistance is determined according to the difference in conductivity between the base layer and surface layer. It was confirmed that the standard deviation of surface roughness has the greatest influence on surface roughness parameters. The results of this study will be useful for selecting the surface material and surface roughness when the design considering the contact resistance is needed.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.11
• /
• pp.49-54
• /
• 1990

In this paper, a simple model is presented for the gate-voltage dependence of the parasitic resistance in MOSFETs with the lightly-doped drain (LDD) structure. At the LDD region located under the gate electrode, an accumulation layer is formed due to the gate voltage. The parasitic resistance of the source side LDD in the channel is treated as a parallel combination of the resistance of the accumulation layer and that of the bulk LDD, which is approximated as a spreading resistance from the end of the channel inversion layer to the ${n^+}$/LDD junction boundary. Also the effects of doping gradients at the junction are discussed. As result of the model, the LDD resistance decreases with increasing the gate voltage at the linear regime, and increase quasi-linearly with the gate voltage at the saturation regime, considering th velocity saturation both in the channel and in the LDD region. The results are in good agreement with experimental data reported by others.

• Journal of the Korean Ceramic Society
• /
• v.49 no.5
• /
• pp.404-411
• /
• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.