Numerical Analysis of Si-based Photovoltaic Modules with Different Interconnection Methods

This paper investigates the output powers of PV modules by predicting three unknown parameters: reverse saturation current, and series and shunt resistances. A theoretical model using the non-uniform physical parameters of solar cells, including the temperature coefficients, voltage, current, series and shunt resistances, is proposed to obtain the I-V characteristics of PV modules. The solar irradiation effect is included in the model to improve the accuracy of the output power. Analytical and Newton methods are implemented in MATLAB to calculate a module output. Experimental data of the non-uniform solar cells for both serial and parallel connections are used to extend the implementation of the model based on the I-V equation of the equivalent circuit of the cells and to extend the application of the model to m by n modules configuration. Moreover, the theoretical model incorporates, for the first time, the variations of series and shunt resistances, reverse saturation current and irradiation for easy implementation in real power generation. Finally, this model can be useful in predicting the degradation of a PV system because of evaluating the variations of series and shunt resistances, which are critical in the reliability analysis of PV power generation.