• 제목/요약/키워드: parallel resistances model

검색결과 10건 처리시간 0.024초

고출력 18650 리튬이온 배터리의 발열인자 해석 및 실험적 검증 (Analysis and Experiment Verification of Heat Generation Factor of High Power 18650 Lithium-ion Cell)

  • 강태우;유기수;김종훈
    • 전력전자학회논문지
    • /
    • 제24권5호
    • /
    • pp.365-371
    • /
    • 2019
  • This study shows the feasibility of the parameter of the 1st RC parallel equivalent circuit as a factor of the heat generation of lithium-ion cell. The internal resistance of a lithium-ion cell consists of ohmic and polarization resistances. The internal resistances at various SOCs of the lithium-ion cell are obtained via an electrical characteristic test. The internal resistance is inversely obtained through the amount of heat generated during the experiment. By comparing the resistances obtained using the two methods, the summation of ohmic and polarization resistances is identified as the heating factor of lithium-ion battery. Finally, the amounts of heat generated from the 2C, 3C, and 4C-rate discharge experiments and the COMSOL multiphysics simulation using the summation of ohmic and polarization resistances as the heating parameter are compared. The comparison shows the feasibility of the electrical parameters of the 1st RC parallel equivalent circuit as the heating factor.

Numerical Analysis of Si-based Photovoltaic Modules with Different Interconnection Methods

  • Park, Chihong;Yoon, Nari;Min, Yong-Ki;Ko, Jae-Woo;Lim, Jong-Rok;Jang, Dong-Sik;Ahn, Jae-Hyun;Ahn, Hyungkeun
    • Transactions on Electrical and Electronic Materials
    • /
    • 제15권2호
    • /
    • pp.103-111
    • /
    • 2014
  • This paper investigates the output powers of PV modules by predicting three unknown parameters: reverse saturation current, and series and shunt resistances. A theoretical model using the non-uniform physical parameters of solar cells, including the temperature coefficients, voltage, current, series and shunt resistances, is proposed to obtain the I-V characteristics of PV modules. The solar irradiation effect is included in the model to improve the accuracy of the output power. Analytical and Newton methods are implemented in MATLAB to calculate a module output. Experimental data of the non-uniform solar cells for both serial and parallel connections are used to extend the implementation of the model based on the I-V equation of the equivalent circuit of the cells and to extend the application of the model to m by n modules configuration. Moreover, the theoretical model incorporates, for the first time, the variations of series and shunt resistances, reverse saturation current and irradiation for easy implementation in real power generation. Finally, this model can be useful in predicting the degradation of a PV system because of evaluating the variations of series and shunt resistances, which are critical in the reliability analysis of PV power generation.

ZnO 바리스터의 유전특성과 등기회로 (Dielectric Properties and a Equivalent Circuit of ZnO-Based Varistor)

  • 노일수;강대하
    • 전기학회논문지
    • /
    • 제56권12호
    • /
    • pp.2166-2172
    • /
    • 2007
  • In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

Component based moment-rotation model of composite beam blind bolted to CFDST column joint

  • Guo, Lei;Wang, Jingfeng;Wang, Wanqian;Ding, Zhaodong
    • Steel and Composite Structures
    • /
    • 제38권5호
    • /
    • pp.547-562
    • /
    • 2021
  • This paper aims to explore the mechanical behavior and moment-rotation model of blind bolted joints between concrete-filled double skin steel tubular columns and steel-concrete composite beams. For this type of joint, the inner tube and sandwiched concrete were additionally identified as basic components compared with CFST blind bolted joint. A modified moment-rotation model for this type of connection was developed, of which the compatibility condition and mechanical equilibrium were employed to determine the internal forces of basic components and neutral axis. Following this, load transfer mechanism among the inner tube, sandwiched concrete and outer tube was discussed to assert the action area of the components. Subsequently, assembly processes of basic coefficients in terms of their stiffness and resistances based on the component method by simplifying them as assemblages of springs in series or in parallel. Finally, an experimental investigation on four substructure joints with CFDST columns for validation purposes was carried out to capture the connection details. The predicted results derived from the mechanical models coincided well with the experimental results. It is demonstrated that the proposed mechanical model is capable of evaluating the complete moment-rotation relationships of blind bolted CFDST column composite connections.

Effect of $HfO_X$ treatment on ITO surface of organic light emitting diodes using Impedance spectroscopy analysis

  • Cho, Jae-Hyun;Park, Hyung-Jun;Han, Kyu-Min;Sohn, Sun-Young;Jung, Dong-Geun;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.506-508
    • /
    • 2008
  • In this work, we used impedance spectroscopy analysis to determine the effect of the $HfO_X$ treatment on the surface of ITO and to model the equivalent circuit for OLEDs. Devices with an ITO/Organic material/Al structure can be modeled as resistances and capacitances arranged in parallel or in series. The number of elements depends on the composition of the structure, essentially the number of layers, and the contacts.

  • PDF

3차원적 전류 흐름을 고려한 FinFET의 기생 Source/Drain 저항 모델링 (Modeling of Parasitic Source/Drain Resistance in FinFET Considering 3D Current Flow)

  • 안태윤;권기원;김소영
    • 전자공학회논문지
    • /
    • 제50권10호
    • /
    • pp.67-75
    • /
    • 2013
  • 본 논문에서는 RSD(Raised Source/Drain)구조를 가지는 FinFET에서 3차원적 전류 흐름을 고려한 소스와 드레인의 해석적 저항모델을 제시한다. FinFET은 Fin을 통해 전류가 흐르기 때문에 소스/드레인의 기생저항이 크고 채널을 포함한 전체저항에서 중요한 부분을 차지한다. 제안하는 모델은 3차원적 전류흐름을 고려하여 contact부터 channel 직전 영역까지의 소스/드레인 저항을 나타내며 contact저항과 spreading저항의 합으로 이루어져 있다. Contact저항은 전류의 흐름을 고려한 가이드라인을 통해 작은 저항의 병렬합으로 모델링되고 spreading저항은 적분을 통해 구현했다. 제안된 모델은 3D numerical solver인 Raphael의 실험결과를 통해 검증했다. 본 연구에서 제안된 기생저항 모델을 BSIM-CMG와 같은 압축모델에 구현하여 DC 및 AC 성능 예측의 정확도를 높일 수 있을 것이다.

지반의 전기비저항을 좌우하는 물성요인 (Physical Property Factors Controlling the Electrical Resistivity of Subsurface)

  • 박삼규
    • 지구물리와물리탐사
    • /
    • 제7권2호
    • /
    • pp.130-135
    • /
    • 2004
  • 본 논문은 지반의 물성과 전기비저항의 관계를 밝히기 위하여 실내에서 여러 종류의 흙과 암석 시료를 대상으로 농도가 다른 9종류의 NaCl 용액으로 공극을 포화시킨 후 전기비저항을 측정하고, 그 결과로부터 흙과 암석의 전기비저항을 좌우하는 물성요인과 이들 요인이 전기비저항에 미치는 영향에 대해서 기존의 경험식을 토대로 비교 검토하였다. 그 결과에 의하면 흙과 암석 시료의 종류에 관계없이 공극수의 전기비저항이 높아짐에 따라 시료의 전기비저항은 높아지고 있으나, 그 증가 폭은 작아지는 경향을 보였다. 이러한 이유는 공극수의 전기비저항이 10 ohm-m 이하의 영역에서는 시료의 전기비저항이 공극수의 전기비저항에 의해서 좌우되지만, 그 이상의 영역에서는 공극수의 전기비저항과 구성물질의 전도성에 영향을 받고 있기 때문으로 생각된다. 또한 glass beads와 세립분의 함량이 $5\%$ 이하인 흙 시료의 전기비저항 실측치는 Archie의 경험식으로부터 구한 계산치와 잘 일치하고 있으나, 그 외 세립분을 $20\%$ 이상 함유하고 있는 흙과 암석 시료의 전기비저항 실측치는 Patnode and Wyllie의 경험식으로 구한 계산치와 거의 일치하고 있었다. 이러한 결과로부터 일반적인 지하수의 전기비저항 영역($20\~200ohm-m$)에서 지반의 전기비저항은 간극수의 전기비저항과 구성물질의 전기전도성을 고려한 병렬 저항 회로 모델을 적용하는 것이 타당한 것으로 밝혀졌다.

표면막과 표면거칠기가 접촉 저항에 미치는 영향 (Effect of Surface Film and Surface Roughness on Contact Resistance)

  • 이현철;이보라;유용훈;조용주
    • Tribology and Lubricants
    • /
    • 제35권1호
    • /
    • pp.16-23
    • /
    • 2019
  • In this study, we aim to analyze the effects of both contact layer properties and surface roughness on contact resistance. The contact has a great influence on performance in terms of electrical conduction and heat transfer. The two biggest factors determining contact resistance are the presence of surface roughness and the surface layer. For this reason we calculated the contact resistance by considering both factors simultaneously. The model of this study to calculate contact resistance is as follows. First, the three representative surface parameters for the GW model are obtained by Nayak's random process. Then, the apparent contact area, real contact area, and contact number of asperities are calculated using the GW model with the surface parameters. The contact resistance of a single surface layer is calculated using Mikic's constriction equation. The total contact resistance is approximated by the parallel connection between the same asperity contact resistances. The results of this study are as follows. The appropriate thickness with reduction effect for contact resistance is determined according to the difference in conductivity between the base layer and surface layer. It was confirmed that the standard deviation of surface roughness has the greatest influence on surface roughness parameters. The results of this study will be useful for selecting the surface material and surface roughness when the design considering the contact resistance is needed.

LDD MOSFET의 기생저항에 대한 간단한 모형 (A Simple Model for Parasitic Resistances of LDD MOSFETS)

  • 이정일;윤경식;이명복;강광남
    • 대한전자공학회논문지
    • /
    • 제27권11호
    • /
    • pp.49-54
    • /
    • 1990
  • 본 논문에서는 LDD(lightly doped drain)구조를 갖는 짧은 채널 MOSFET에서의 기생저항의 게이트 전압 의존도에 대한 모형을 제시하였다. 게이트 전극 밑에 위치한 LDD 영역에서는 게이트 전압에 의해 준 이차원적인 축적층(quasi two-dimensional accumulation layer)이 형성된다. 소오스 측 LDD 기생저항을 축적층의 저항과 벌크 LDD 저항의 병렬 연결로 취급하였으며 별크 LDD 저항은 채널의 반전층 끝으로부터 ${n^+}$영역의 경계까지 퍼짐 저항으로 근사하였다. 그리고 접합에서의 도우핑 농도 구배가 LDD 저항에 미치는 영향이 토의하였다. 본 모형의 결과로 선형 영역에서는 LDD 저항이 게이트 전압의 증가에 따라 감소하고, 포화영역에서는 채널과 LDD에서 속도포화를 고려한 결과, 게이트 전압에 대해 준 일차적으로 증가하는 것으나 나타나 발표된 실험결과들과 일치하였다.

  • PDF

Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

  • Shin, Eui-Chol;Ahn, Pyung-An;Jo, Jung-Mo;Noh, Ho-Sung;Hwang, Jaeyeon;Lee, Jong-Ho;Son, Ji-Won;Lee, Jong-Sook
    • 한국세라믹학회지
    • /
    • 제49권5호
    • /
    • pp.404-411
    • /
    • 2012
  • The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.