• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.9-15
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• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.91-101
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• 2017

In this study, we conducted the preliminary research for high speed laser cutting of LED module. In particular, the feasibility of ultra-high speed laser cutting of 100 mm/s which exceeds the cutting speed of conventional dicing saw was examined. For this, copper/ceramic and silicone/ceramic hybrid substrates, which are the components of the LED module, were fabricated, and the surface morphology, surface roughness and flexural strength of the laser-cut samples were investigate and compared with the dicing-cut samples. To investigate optimal laser cutting conditions for hybrid substrates, the effects of various laser cutting conditions on cutting surface characteristics were studied using single ceramic and copper substrate. Optimal laser cutting conditions of the hybrid substrates were the use of Ar assist gas, high laser power and high assist gas pressure. Comparing the cutting surface of the hybrid substrates, the surface characteristics of the laser-cut samples are slightly inferior to those of the dicing-cut samples. The average surface roughness of the laser-cut samples was about $9{\mu}m$, and that of the dicing-cut samples was about $4{\mu}m$. However, considering very low cutting speed (3 mm/s) of the dicing saw, the surface morphology of the laser-cut sample was relatively uniform, and the surface roughness was not much different from that of the dicing-cut sample. The flexural strength of the laser-cut samples was equivalent to or slightly inferior to the flexural strength of dicing-cut samples. However, if the laser processing conditions are sufficiently optimized, the ultra-high speed laser cutting of the LED module will be possible.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.55-59
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• 2004

We fabricates the $TiO_2$ thin film from anatase phase $TiO_2$ powder having good photocatalytic property using aerosol deposition method at room temperature. Aerosol deposition method, which sprays an aerosol powder with ultrasonic velocity and deposits a thin film on substrate at low temperature, has the advantages of low thermal stress and low cost. To fabricate the $TiO_2$ thin film, the aerosol bath pressure and chamber pressure were 500 torr and 0.4 torr, respectively. The difference of aerosol bath pressure and chamber pressure accelerated the $TiO_2$ nano powder to ultrasonic velocity through the nozzle of $0.4 mm{\times}10 mm$ and $TiO_2$ thin film was finally formed. SS mesh with diameter of 50 mm was used as a substrate to apply the $TiO_2$ thin film to water quality purification. The raw powder was dehydrated for the good dispersion of $TiO_2$ powder. To suppress the formation of second particle, the powder was dispersed for 90 min in alcohol bath by ultrasonic treatment and desiccated. The grain size of $1 {\mu}m$ was observed in $TiO_2$ thin film deposited on SUS mesh by scanning electron microscopy (SEM). The anatase phase of $TiO_2$ thin film was also observed by X-ray diffraction (XRD) and the anatase phase of raw powder was nicely maintained after aerosol deposition. The results are applicable to water treatment filter having photocatalytic reaction.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.7-13
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• 2007

In the optical module for optical communications, the flip chip bonding is used fer the precise alignment of the optical fiber and optical device. In flip chip bonding, the optical device is aligned and welded while observing the alignment mark of substrate and chip by using flip chip bonder in order to bond the optical device at the exact position. In this research, optical passive alignment method of photodiode(PD) flip chip bonding is suggested for low cost optical subassembly. By using the visible He-Ne laser (633nm wavelength), photodiode is easily aligned with emitting spot on the optical fiber with the help of stereoscopic alignment system. We compensated wavelength dependent deviation about 4m to find out real alignment position of 1550nm input laser by ray tracing. The maximum optical coupling efficiency between the optical fiber and photodiode was about 23.3%.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.55-59
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• 2011

Folding endurance, bending fatigue and monotonic tensile tests of 4 kinds of Cu foil on flexible substrate was performed to investigate the relationship between folding or bending endurances and tensile characteristics. The repeated 5.3 or 2.0% strain was applied to Cu foil in folding endurance test or bending fatigue test while monitoring the electrical resistance. Elastic modulus, yield strength, ultimate tensile strength, ductility, and toughness were obtained by monotonic tensile test on the same samples. The Cu foil with higher toughness and ductility showed higher reliabilities in folding or bending fatigue. However, elastic modulus and yield strength did not show any relationship with folding and bending reliability. This is because the failures of Cu foil by folding or bending fatigue were closely related to the fracture energy of metal.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.43-49
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• 2010

Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.1-9
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• 2002

The metallurgical reaction properties between the pad consisted of 0.5 $\mu\textrm{m}$Au/5 $\mu\textrm{m}$Ni/Cu layers on a conventional ball grid array (BGA) substrate and In-15 (wt.%)Pb-5Ag solder ball were characterized during the reflow process and solid aging. During the reflow process of 1 to 5 minutes, it was observed that thin $AuIn_2$ or Ni-In intermetallic layer was formed at the interface of solder/pad. The dissolution rate of the Au layer into the molten solder was about $2\times 10^{-3}$ $\mu\textrm{m}$/sec which is remarkably low in comparison with a eutectic Sn-37Pb solder. After solid aging treatment for 500 hrs at $130^{\circ}C$, the thickness of $Ni_{28}In_{72}$ intermetallic layer was increased to about 3 $\mu\textrm{m}$ in all the conditions nevertheless the initial reflow time was different. These result show that In atoms in the solder alloy were diffused through the $AuIn_2$ phase to react with underlaying Ni layer during solid aging treatment. From the microstructural observation and shear tests, the reaction properties between In-15Pb-5Ag alloy and Au/Ni surface finish were analyzed not to trigger Au-embrittlement in the solder joints unlike Sn-37Pb composition.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.67-73
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• 2009

Compared to the chip-bonding process utilizing solder bumps, flip chip process using Cu pillar bumps can accomplish fine-pitch interconnection without compromising stand-off height. Cu pillar bump technology is one of the most promising chip-mounting process for RF packages where large gap between a chip and a substrate is required in order to suppress the parasitic capacitance. In this study, Cu pillar bumps and Sn bumps were electroplated on a chip and a substrate, respectively, and were flip-chip bonded together. Contact resistance and chip shear force of the Cu pillar bump joints were measured with variation of the electroplated Sn-bump height. With increasing the Sn-bump height from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance was improved from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$ and the chip shear force increased from 3.8 N to 6.8 N. On the contrary, the aspect ratio of the Cu pillar bump joint decreased from 1.3 to 0.9. Based on the variation behaviors of the contact resistance, the chip shear force, and the aspect ratio, the optimum height of the electroplated Sn bump could be thought as 20 ${\mu}m$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.29-35
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• 2017

In this paper, we investigated a manufacturing process of metal micro-wire interconnection on submillimeter diameter catheter. Over the years, flexible electronic researches have focused on flexible plane polymer substrate and micro electrode manufacturing on its surface. However, a curved polymer substrate, such as catheter, is very important for medical application. Among many catheters, importance of submillimeter diameter steerable catheter is increasing to resolve the several limitations of neurosurgery. Steering actuators have been researched for realizing the steerable catheter, but there is no research about practical wiring for driving these actuators. Therefore we developed a new manufacturing process for metal micro-wire interconnection on submillimeter diameter catheter. We designed custom jigs for alignment of the metal micro-wires on the submillimeter diameter catheter. An UV curing system and commercial products were used to reduce the manufacturing time and cost; Au micro-wire, UV curable epoxy, UV lamp, and submillimeter diameter catheter. The assembled catheter was characterized by using an optical microscope, a resistance meter, and a universal testing machine.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.71-75
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• 2023

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO₂/Si and c-Al₂O₃ substrates using CsBr and PbBr₂, respectively, under the same growth conditions. Cs₄PbBr₆-CsPbBr₃ crystallites were grown on the SiO₂ with polycrystalline structure, while a CsPbBr₃ (100) dominant thin film was formed on the c-Al₂O₃ substrate with single crystal structure. From the photoluminescence measurement, CsPbBr₃ showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs₄PbBr₆-CsPbBr₃ mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.