• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 전기의세계
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• 제13권3호
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• pp.13-20
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• 1964

The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.144.1-144.1
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• 2016

We fabricate organic single crystal nanowire heterojunction p-n diode poly(3-hexylthiophene)(P3HT) and from Phenyl-C61-butyric acid methyl ester(PCBM) using by liquid-bridge mediated nanotransfer molding(LB-nTM) method. LB-nTM has been reported an one step direct printing method for making well-aligned nanowire arrays. Moreover, multi-patterning nanostructures can be fabricated with the consecutive printing process. As a result, it is possible to make simple and basic concept of heterojunction devices such as lateral organic p-n nanojunction diode. P3HT/PCBM nanowires heterojunction diode has rectifying behavior with on/off ratios of ~20.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• 한국진공학회지
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• 제13권1호
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• pp.14-21
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• 2004

오늘날 전력소자의 작동에 고주파를 사용하기 때문에 에너지 손실을 줄이기 위해 전력소자의 스위칭 속도를 증가시키는 것은 필수적이다. 본 연구에서는 $p^+- n^-$ 접합 다이오드의 스위칭 속도를 증가시킬 목적으로 minority carrier의 수명을 감소시킬 수 있는 전자조사를 실시하였다. 다이오드의 전기적 성질에 대한 전자조사의 효과를 나타냈다. 스위칭 속도는 효과적으로 증가하였다. 또한 증가될 것으로 예상되는 접합 누설 전류와 전자조사 후 정전압강하는 최적 조건의 에너지와 dose량으로 조사된 $p^+- n^-$접합 다이오드에서는 무시할 수 있는 정도로 나타났다. DLTS와 C-V 분석은 실리콘 기판에서 전자조사로 감소된 결함은 0.284eV와 0.483eV의 에너지 준위를 갖는 donor-like 결함인 것을 보여준다. 본 연구에서의 실험 결과를 고려해 보면, 전자조사는 $p^+- n^-$ 접합 다이오드 전력 소자의 스위칭 속도를 증가시켜 에너지 손실을 감소시킬 수 있는 가장 유용한 기술이라고 결론지을 수 있다.

• 전자공학회논문지A
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• 제30A권6호
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• pp.38-48
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• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.