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http://dx.doi.org/10.4313/TEEM.2002.3.1.001

p-n Heterojunction Composed of n-ZnO/p-Zn-doped InP  

Shim, Eun-Sub (Department of Electrical and Electronic Engineering, Yonsei University)
Kang, Hong-Seong (Department of Electrical and Electronic Engineering, Yonsei University)
Kang, Jeong-Seok (Department of Electrical and Electronic Engineering, Yonsei University)
Pang, Seong-Sik (Department of Electrical and Electronic Engineering, Yonsei University)
Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.1, 2002 , pp. 1-3 More about this Journal
Abstract
A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.
Keywords
ZnO; InP; PLD; p-n junction; LED;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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