Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Silicon thin film and p-n junction diode made by $CO_2$ laser-induced CVD method

$CO_2$ Laser-induced CVD법에 의한 Silicon박막 및 p-n 접합 Silicon제작

  • Choi, H.K. (Dept. of Physics, Yonsei University) ;
  • Jeong, K. (Dept. of Physics, Yonsei University) ;
  • Kim, U. (Dept. of Physics, Yonsei University)
  • Published : 1989.07.21
Download PDF
⟨ Previous Next ⟩

Abstract

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

Keywords