Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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p-n heterojunction composed of n-ZnO/p-Zn-doped InP

n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구

  • 심은섭 (연세대학교 전기전자공학과) ;
  • 강홍성 (연세대학교 전기전자공학과) ;
  • 강정석 (연세대학교 전기전자공학과) ;
  • 방성식 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2001.11.08
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Abstract

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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