• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• 한국세라믹학회지
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• 제54권4호
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• pp.303-307
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• 2017

Pure $In_2O_3$, 0.5 and 1.0 wt% Mg doped $In_2O_3$ hollow spheres were synthesized by ultrasonic spray pyrolysis of a solution containing In-, Mg-nitrate and sucrose and their gas sensing characteristics to 5 ppm $C_2H_5OH$, p-xylene, toluene, and HCHO were measured at 250, 300 and $350^{\circ}C$. Although the addition of Mg decreases the specific surface area and the volume of meso-pores, the gas response (resistance ratio) of the 0.5 wt% Mg doped $In_2O_3$ hollow spheres to 5 ppm $C_2H_5OH$ at $350^{\circ}C$ (69.4) was significantly higher than that of the pure $In_2O_3$ hollow spheres (24.4). In addition, the Mg doped $In_2O_3$ hollow spheres showed the highest selectivity to $C_2H_5OH$. This was attributed to the dehydrogenation of $C_2H_5OH$ assisted by basic MgO into reactive $CH_3CHO$ and $H_2$.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.50-56
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• 2005

The electrical properties, clamping voltage characteristics, and stability of dysprosia-doped ZnO-P $r_{6}$ $O_{11}$-based varistors were investigated with different dysprosia contents from 0 to 2.0 mol%. The incorporation of dysprosia in varistor ceramics greatly increased the varistor voltage from 50 to 481.0 V/mm. It was found that the dysprosia is good additive improving a nonlinearity, in which the nonlinear exponent is above or near 50, and the leakage current is below 1.0 $\mu$A. The dysprosia-doped varistors exhibited superior clamping voltage characetristics, in which clamping voltage ratio is above or neat 2 at surge current of 50 A. The 0.5 mol% dysprosia-doped varistors only exhibited high stability, with the rate of varistor voltage of -0.9%, under DC acceleraetd aging stress, 0.95 $V_{lmA}$/15$0^{\circ}C$/24 h.h.h.h.

• 산업기술연구
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• 제32권A호
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• pp.95-102
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• 2012

To advance luminance efficiency of Titania at visible range, N-doped $TiO_2$ was prepared by using ammonium hydroxide as a source of nitrogen. The photoactivities of the synthesized $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, UV-C, UV-A and fluorescent lamp. As a result, at UV-C is high efficiency $UV_{254}$ decrease and TOC removal. In this study, the best synthetic conditions of N-doped $TiO_2$ were 5.0 M of ammonium hydroxide concentration and calcination temperature of $550^{\circ}C$. The degradation rate of humic acid as an evaluation of photoactivities of the catalysts were conducted with pH variation, decrease rate of molecular absorption, removal rate of total organic carbon and fluorescece evolution for humic acid solution. XRD and SEM were applied for analysis of surface analysis of the catalysts.

• 한국광학회지
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• 제4권1호
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• pp.101-107
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• 1993

3준위 레이저 rate equation 및 overlap integral로부터 파장 1.48 ${\mu}m$에서 여기된 E$r^{3+}$ 첨가 광섬유 광증폭기를 위한 광섬유 매개 변수의 최적 조건을 계산하였다. 이 계산으로부터 Er3+ 첨가 광섬유 광섬유 광증폭기의 소신호 이득(small signal gain) 특성을 개구수 (N.A.), V값, 광섬유 길이, 차단 파장(cutoff wavelength) 등의 함수로 알아 보았으며 또한, 최대 소신호 이득을 갖기 위한 광섬유 매개 변수를 결정하였다.

• 대한금속재료학회지
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• 제50권11호
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• 공업화학
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• 제16권2호
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• pp.262-266
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• 2005

대표적인 지방족 산증식제인 4-hydroxy-4'-p-tosyloxy isopropylidene dicyclohexane을 산에 민감한 고분자인 poly[tert-butyl methacrylate] (pTBMA), poly[tetrahydropyranylmethacrylate] (pTHPMA) 및 poly[tert-butoxycarbonyloxystyrene] (pTBOCST) 수지에 첨가하여 열적 안정성과 감도 증진의 관점에서 산증식제의 효과를 비교하였다. 산증식제는 pTBMA 또는 pTBOCST 필름에서는 $120^{\circ}C$에서 20 min까지 안정하였으며, pTHPMA 필름에서는 5 min까지 안정하였다. 산증식제를 첨가한 레지스트의 감도 증진효과는 pTBMA는 4배, pTHPMA는 2배 정도 증진되었지만, pTBOCST의 경우는 감도 증진효과가 미미하였다. 이를 통하여 산증식제의 감도 증진효과와 열적 안정성은 수지의 종류에 따라 다르게 나타나는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.