• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1895-1898
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• 2018

The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.101-106
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• 1992

pH-ISFETs, the semiconductor pH sensors, were combined with immobilized enzyme membranes to prepare FET type urea and glucose sensors and its operational characteristics were investigated. Photolithography techniques were applied to immobilize enzymes on the $H^{+}$ sensing membrane of the pH-ISFET with photo-sensitive polymers, PVA-SbQ. Fabricated urea and glucose sensors could determine $0.5{\sim}50{\;}mg/dl$ urea concentrations and $10{\sim}1000{\;}mg/dl$ glucose concentrations, respectively.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.612-615
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• 2004

A high-voltage generator is used to program the anti-fuse of the semiconductor chip. A new high-voltage generator consists of PN diodes and new stack type capacitors. An oscillator supply pulses to the high-voltage generator. The pulse period of the oscillator is delayed by controlling gate-voltage of the MOS. The pulse period is about 27ns, therefore the pulse frequency is about 37MHz. The threshold voltage of PN diode is about 0.8V. The capacitance of new stack type capacitor is about 4pF. The output voltage of the new high-voltage generator is about 7.9V and its current capacity is about $488{\mu}$A.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.43-48
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• 2014

Two-level inverter has some disadvantages like high harmonics contained in the output current, efficiency limit and stress to switching device as IGBT and FET. Many researches have reported multi-level inverter to complement two-level inverter of problems. In this paper, we suggest MPPT algorithm of multi-string three-level solar inverter that considered nowadays. We added midpoint controller in order to implement the MPPT algorithm because the three-level inverter has to need midpoint controller and procured the stability of direct current link. We verify the superiority of multi-string T-Type inverter and the algorithm we suggested with solar irradiance variation experiment and MPPT efficiency measurement. The MPPT efficiency was confirmed with a high efficiency more than 99.97%.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.501-502
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• 2008

In this study, P-doped ZnO thin films were prepared on sapphire substrates by pulsed laser deposition and annealing method. The electrical properties were investigated as a function of annealing temperatures at a fixed oxygen pressure. The XRD measurement showed that p-doped ZnO thin films were c-axis oriented. The Hall measurement showed that p-type ZnO thin film was observed. The carrier concentration of $1.18{\times}10^{16}cm^{-3}$ and the mobility of $0.96\;cm^{-3}/Vs$ were obtained for the P-doped ZnO thin film fabricated annealing temperature $850^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.144-145
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• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.