Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Structure and Electrical Properties of P-doped ZnO Thin Films with Annealing Temperatures

열처리 온도에 따른 P-doped ZnO 박막의 구조적 및 전기적 특성

  • Han, Jung-Woo (Dept. of Electronics Engineering, Inha University) ;
  • Yoon, Yung-Sup (Dept. of Electronics Engineering, Inha University) ;
  • Kang, Seong-Jun (Dept. of Electrical and Semiconductor Engineering, Chonnam National University) ;
  • Joung, Yang-Hee (Dept. of Electrical and Semiconductor Engineering, Chonnam National University)
  • 한정우 (인하대학교 전자공학과) ;
  • 윤영섭 (인하대학교 전자공학과) ;
  • 강성준 (전남대학교 전기 및 반도체공학과) ;
  • 정양희 (전남대학교 전기 및 반도체공학과)
  • Published : 2008.06.18
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Abstract

In this study, P-doped ZnO thin films were prepared on sapphire substrates by pulsed laser deposition and annealing method. The electrical properties were investigated as a function of annealing temperatures at a fixed oxygen pressure. The XRD measurement showed that p-doped ZnO thin films were c-axis oriented. The Hall measurement showed that p-type ZnO thin film was observed. The carrier concentration of $1.18{\times}10^{16}cm^{-3}$ and the mobility of $0.96\;cm^{-3}/Vs$ were obtained for the P-doped ZnO thin film fabricated annealing temperature $850^{\circ}C$.

Keywords