Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A New High-Voltage Generator for the Semiconductor Chip

  • Kim Phil Jung (Dept of Internet Information, Sunghwa College) ;
  • Ku Dae Sung (Dept of Internet Information, Sunghwa College) ;
  • Chat Sin Young (Dept of Internet Information, Sunghwa College) ;
  • Jeong Lae Seong (Dept of Electronic Engineering, Chosun University) ;
  • Yang Dong Hyun (Dept of Electronic Engineering, Chosun University) ;
  • Kim Jong Bin (Dept of Electronic Engineering, Chosun University)
  • Published : 2004.08.01
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Abstract

A high-voltage generator is used to program the anti-fuse of the semiconductor chip. A new high-voltage generator consists of PN diodes and new stack type capacitors. An oscillator supply pulses to the high-voltage generator. The pulse period of the oscillator is delayed by controlling gate-voltage of the MOS. The pulse period is about 27ns, therefore the pulse frequency is about 37MHz. The threshold voltage of PN diode is about 0.8V. The capacitance of new stack type capacitor is about 4pF. The output voltage of the new high-voltage generator is about 7.9V and its current capacity is about $488{\mu}$A.

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