• 한국재료학회지
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• 제27권2호
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• pp.119-126
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• 2017

WC-CrC-Ni coatings were prepared by nine processes of the Taguchi program with three levels for the four spray parameters: spray distance, flow rates of hydrogen and oxygen, and powder feed rate. The optimal coating process (OCP) was oxygen flow rate of 38 FMR, hydrogen flow rate of 53 FMR, powder feed rate of 25 g/min, and spray distance of 7 inches. Hardness of 1150 Hv and porosity of 1.2 %, were obtained by OCP; these are better results compared with the highest 1033 Hv and the lowest 1.5 % porosity obtained by nine processes of the Taguchi program. Friction coefficient of the WC-CrC-Ni coating decreased from $0.36{\pm}0.07$ at $25^{\circ}C$ to $0.23{\pm}0.07$ at $450^{\circ}C$. These values were smaller than those of the EHC (electrolytic hard chrome) plating at both temperatures due to lubrication from the oxide debris. The wear trace and wear depth of the coating are smaller than those of the EHC at both temperatures. Pitting was not found in the WC-CrC-Ni coating sample, while it did appear in the EHC sample.

• Korean Chemical Engineering Research
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• 제47권1호
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• pp.79-83
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• 2009

본 연구에서 고밀도 플라즈마 식각 장치를 사용한 비정질 실리콘 막의 게이트 전극선 형성공정에서 여러 가지 식각 변수가 치수 제어와 식각 속도 및 식각 선택비 등 식각 특성에 미치는 영향을 분석하였다. $Cl_2/HBr/O_2$로 구성된 식각 기체의 전체 유량을 증가시키면 비정질 실리콘의 식각 속도가 증가하나 식각 전후의 형상치수는 변화없이 거의 일정하였다. 전체 유량을 고정시키고 $Cl_2$와 HBr 간의 유량비를 변화시키면 HBr의 유량이 커질수록 비정질 실리콘의 식각 속도가 감소하였다. $O_2$의 유량을 증가시키면 산화막의 식각 속도가 상대적으로 낮아져 식각 선택비를 증가시켜 식각 공정의 안정성을 높이나 게이트 전극선을 경사지게 하는 특성을 보인다. Source power의 증가는 비정질 실리콘 식각 속도의 증가와 더불어 형상치수의 증가를 가져오며, bias power의 증가는 비정질 실리콘과 산화막의 식각 속도를 증가시키나 식각 선택비를 크게 감소시키는 경향을 보였다.

• 대한임상독성학회지
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• 제17권2호
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• pp.102-107
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• 2019

Purpose: Acute carbon monoxide (CO) poisoning is one of the most common types of poisoning and a major health problem worldwide. Treatment options are limited to normobaric oxygen therapy, administered using a non-rebreather face mask or hyperbaric oxygen. Compared to conventional oxygen therapy, high-flow nasal cannula oxygen (HFNC) creates a positive pressure effect through high-flow rates. The purpose of this human pilot study is to determine the effects of HFNC on the rate of CO clearance from the blood, in patients with mild to moderate CO poisoning. Methods: CO-poisoned patients were administered 100% oxygen from HFNC (flow of 60 L/min). The fraction of COHb (fCOHb) was measured at 30-min intervals until it decreased to under 10%, and the half-life time of fCOHb (fCOHb t_1/2) was subsequently determined. Results: At the time of ED arrival, a total of 10 patients had fCOHb levels ≥10%, with 4 patients ranging between 10% and 50%. The mean rate of fCOHb elimination patterns exhibits logarithmic growth curves that initially increase quickly with time (HFNC equation, Y=0.3388*X+11.67). The mean fCOHbt_1/2 in the HFNC group was determined to be 48.5±12.4 minutes. Conclusion: In patients with mild to moderate CO poisoning, oxygen delivered via high flow nasal cannula is a safe and comfortable method to treat acute CO toxicity, and is effective in reducing the COHb half-life. Our results indicate HFNC to be a promising alternative method of delivering oxygen for CO toxicity. Validating the effectiveness of this method will require larger studies with clinical outcomes.

• 한국진공학회지
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• 제10권2호
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• pp.182-188
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• 2001

폴리카보네이트 시트의 내마모성을 향상시키기 위하여 HMDSO 모노머와 산소를 사용하여 플라즈마 기상증착시킨 $SiO_xC_y$ 필름의 특성을 분석하였다. RF출력, 산소투입량, 수소투입량을 변화시키면서 각 증착조건에 따른 생성된 필름의 화학결합구조, 원소조성, 표면조도, 헤이즈 특성에 미치는 영향을 FTIR, XPS, AFM, Hazemeter를 이용하여 알아보았다. HMDSO와 산소를 사용한 박막의 증착은 100 nm/min이상의 높은 증착속도를 가졌고,증착실험에서 얻은 증착필름의 원소조성을 XPS를 이용하여 구한 결과, 종전의 다른 유기실리콘계 모노머를 사용했을때보다 박막에 존재하는 탄소잔류물을 효과적으로 감소시키는 것을 확인하였다. 또한, RF출력 200 Watt에서 산소가 100 sccm투입되었을 때 가장 우수한 헤이즈 특성을 보이는 막을 얻을 수 있었다. 본 연구로부터 HMDSO/$O_2$시스템이 탄소함량이 낮은 박막을 형성시키고 내마모도가 좋은 박막을 증착시키는데 효과적인 것을 알 수 있었다.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

• 한국수소및신에너지학회논문집
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• 제8권1호
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• pp.5-10
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• 1997

Because of environmental pollution and reserve limitations of fossil fuels, several alternative energies have been developing. One of them, the hydrogen is researched as a highly probable solution. In this study pure hydrogen gas and oxygen gas are burned in combustor to reduce the emission, and a gas turbine is used. Cooling water around the combustor recovers the cooling heat loss to useful work by being expanded from liquid to vapor, being injected into the combustor and making pressure rise with working fluid to get more turbine power. Because pure hydrogen and oxygen are used, there is no carbonic emission such as CO, $CO_2$, HC nor $NO_x$, and $SO_x$. The power is obtained by turbine system, which makes lower noise and vibration than any reciprocating engine. Running of a turbine is searched under various conditions of hydrogen flow rate and water injection rate. Maximum speed of the turbine is obtained when the combustion reaches steady state. It is enable to determine the optimum rate between hydrogen flow and water injection which makes turbine run maximum speed.

• 한국터널지하공간학회 논문집
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• 제18권2호
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• pp.175-181
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• 2016

본 연구는 액체질소와 같이 급속 동결이 가능하면서 질식의 위험을 배제할 수 있는 냉매로서 액화공기를 선정하였고 이의 적용성을 평가하였다. 액화공기의 안정성을 평가하기 위해 액체질소와 액체산소가 혼합된 액화공기의 산소 농도가 산업안전보건법에 제시된 산소 농도 기준에 부합되는지를 실험적으로 검증하였으며, 액체질소 및 액체산소의 혼합 비율, 액화공기 저장용기의 압력변화 및 유량변화에 따른 액화공기 산소 농도변화를 살펴보았다. 그 결과, 액체질소 및 액체산소를 8:2로 혼합하였을 경우 산업안전보건법에 제시된 산소 농도 기준에 부합되는 것을 확인하였다. 액화공기 저장용기의 압력변화 및 유량변화는 액화공기의 산소 농도에 큰 영향을 미치지 않는 것으로 나타났다.

• 한국표면공학회지
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• 제40권2호
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2018년도 춘계학술대회
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• pp.188-192
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• 2018

대뇌혈류를 증가 시키는 수술은 뇌경색의 치료방법중 하나이다. 그러나 수술과 같은 침습적인 방법은 환자에게 수술 후유증 또는 부작용을 부담하게 한다. 이러한 침습적인 방법을 보완하기 위해 사람의 혈압을 이용해, 사지에 압박을 가하여 대뇌 혈류를 증가 시키는 비 침습적인 장치도 등장하였다. 그러나 속도와 정확성이 떨어지는 문제점이 제기되었다. 본 논문에서는, 정확한 측정과 측정하는 데에 걸리는 시간을 기존의 장치보다 개선하기 위해, Blood Oxygen Level Sensor를 이용하여, 양팔에 압력을 주면서 각 팔의 Perfusion Index를 측정하여, Perfusion Index가 일정 값 이하로 떨어지는 순간의 75% 압력을 팔에 가하고, 다리에는 팔에서 구해진 압력 값을 이용해 계산하여 얻은 압력을 가한다. 기존의 혈압 측정식 대뇌혈류증가 장치와 같이, 혈류량을 20%이상 증가시킬 수 있고, 또한 측정 시간도 단축한 결과를 얻어 뇌경색 환자에게 선택적으로 사용할 수 있다.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.