Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Structural and Electrical Characteristics of IZO Thin Films Deposited at Different Hydrogen Flow Rate

수소 유량에 따른 IZO 박막의 구조적 및 전기적 특성

  • Hong, Kyoung-Lim (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu-Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 홍경림 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Received : 2019.08.06
  • Accepted : 2019.09.23
  • Published : 2019.09.30
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Abstract

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H2 flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

Keywords

References

  1. K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., 10, pp.1718-1722, 1992. https://doi.org/10.1116/1.577776
  2. K. Tominaga, T. Ueda, T. Ao, M. Kataoka, and I. Mori, "ITO films prepared by facing target sputtering system", Thin Solid Films, 281-282, pp. 194 (1996). https://doi.org/10.1016/0040-6090(96)08611-7
  3. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245-250, 2003. https://doi.org/10.1016/S0040-6090(03)01182-9
  4. J. H. Heo, D. S. Han, Y. L. Lee and K. M. Lee," Electrical and Structural characteristics of ITO thin films deposited under different ambient gases", Journal of the Semiconductor & Display Equipment Technology, Vol. 7, No. 4, pp. 7-11, 2008.
  5. J. H. Heo, Y. L. Lee and K. M. Lee," Electrical and structural characteristics of AZO thin films deposited by reactive sputtering", Journal of the Semiconductor & Display Equipment Technology, Vol. 8, No. 1, pp. 33-38, 2009.
  6. M. G. Lee and K. M. Lee, "Structural and Electrical Characteristics of IGZO thin Films deposited at Different Substrate Temperature", Journal of the Semiconductor & Display Equipment Technology, Vol. 15, No. 1, pp. 1-5, 2016.
  7. P. K. Song, H. Akao, M. Kamei, Y. Shigesato, I. Yasui, "Preparation and Crystallization of Tin-doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering", Japanese Journal of Appl. Phys., Vol. 38, Part 1, Number 9A, PP. 5224-5226, 1999. https://doi.org/10.1143/JJAP.38.5224
  8. D. H. Zhang and H. L. Ma, "Scattering mechanisms of charge carriers in transparent conducting oxide films", Appl. Phys., Vol. A62, pp. 487-492, 1996.
  9. Y. S. Jung, J. Y. Seo, D. K. Lee and D. Y. Jeon, "Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film", Thin Solid Films, 445, pp. 63-71, 2003. https://doi.org/10.1016/j.tsf.2003.09.014
  10. K. H. Noh, M. K. Choi, S. H. Park, and H. R, Joo, "Amorphous Transparent Conducting film $In_2O_3$:Zn", Hankook Kwanghan Hoeji, 13, pp.455-459, 2002. https://doi.org/10.3807/KJOP.2002.13.5.455
  11. D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, "Amorphous IZO-based transparent thin film transistors", Thin Solid Films, 516, pp.5894-5898, 2008. https://doi.org/10.1016/j.tsf.2007.10.081
  12. L. Raniero, I. Ferreira, A. Pimentel, A. Goncalves, P. Canhola, E. Fortunato, and R. Martins, "Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings", Thin Solid Films, 511-512, pp. 295-298, 2006. https://doi.org/10.1016/j.tsf.2005.12.057
  13. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, "Electrical and optical properties of amorphous indium zinc oxide films", Thin Solid Films, 496(1), pp.99-103, 2006. https://doi.org/10.1016/j.tsf.2005.08.257
  14. K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, "Lowtemperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process", Nature Materials, 10, pp. 45-50, 2011. https://doi.org/10.1038/nmat2914
  15. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, "Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film", Thin Solid Films, 445, pp.63-71, 2003. https://doi.org/10.1016/j.tsf.2003.09.014