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http://dx.doi.org/10.4313/TEEM.2014.15.6.315

A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates  

Kim, Jin-Seob (Department of Electronics Engineering, Chungnam National University)
Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University)
Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University)
Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University)
Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University)
Kim, Seong-Hyeon (Department of Electronics Engineering, Chungnam National University)
An, Jin-Un (Department of Electronics Engineering, Chungnam National University)
Ko, Young-Uk (Department of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.6, 2014 , pp. 315-319 More about this Journal
Abstract
In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.
Keywords
a-IGZO; Light stress mechanism; Oxygen vacancy; Negative-U center;
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