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Structural and Electrical Characteristics of IZO Thin Films Deposited at Different Hydrogen Flow Rate  

Hong, Kyoung-Lim (Dept. of Materials Engineering, Korea University of Technology and Education)
Lee, Kyu-Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.3, 2019 , pp. 7-11 More about this Journal
Abstract
We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H2 flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.
Keywords
IZO Thin Film; RF-Magnetron Sputtering; Hydrogen Flow Rate;
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Times Cited By KSCI : 3  (Citation Analysis)
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