• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.236-236
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• 2013

비냉각 적외선 검출기는 산업용 군사용으로 최근 각광을 받고 있다. 이는 주야간 빛이 없는 곳에서도 사물의 열을 감지할 수 있어 인체감지 및 보안감시, 에너지 절감 등에 응용될 수 있는 핵심부품이다. 비냉각 적외선 검출기로는 재료의 저항의 변화를 감지하는 마이크로볼로미터형이 가장 많이 사용된다. 감지재료로는 비정질 실리콘(a-Si)과 산화바나듐(VOx)이 가장 많이 사용된다. VOx 박막은 일반적으로 RF sputtering 방법으로 증착이 되며, 저항이 낮고, 저항의 온도변화 계수(TCR)가 크며 신호 대 잡음 특성이 우수한 반면 산소(oxygen) phase가 다양하여 갓 증착된 상태의 박막은 재현성이 떨어지는 단점이 있다. 본 연구에서는 기존의 V 타겟을 사용한 VOx 박막을 증착하는 방법을 개선하여 ZnO 나노박막을 중간에 삽입하여 저항 특성을 조절할 뿐만 아니라 열처리에 의해 TCR 값을 향상시키고, VO2 phase 가 주로 나타나는 박막 증착 및 공정 방법을 소개한다. RF sputtering 장비를 이용하여 산소와 아르곤 가스의 혼합비를 4.5로 하였으며, VOx 증착 시 플라즈마 Power는 150 W 로 하여 상온에서 증착하였다. 갓 증착된 VOx 다층박막의 XRD 스펙트럼은 V2O5 피크가 주된 상을 이루고 있었으며, 산소열처리에 의해 VO2 상이 주로 나타남을 알 수 있었다. TCR 값은 갓 증착된 샘플에서 -0.13%/K의 값을 얻었으며, $300^{\circ}C$에서 50분간 열처리 후 -3.37%/K 으로 급격히 향상됨을 알 수 있었다. 저항은 열처리 후 약 100 kohm으로 낮아져 검출소자를 위한 조건에 적합한 특성을 얻을 수 있었다. 또한 산소열처리의 온도 및 시간에 따라 TCR 및 표면 거칠기 특성을 조사하였으며, 최적의 열처리 조건을 얻고자 하였다.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.359-361
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• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4468-4472
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• 2010

SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film obtained by plasma method had the main Si-O-C bond with the molecule vibration mode in the range of $930{\sim}1230\;cm^{-1}$ which consists of C-O and Si-O bonds related to the cross link formation according to the dissociation and recombination. The C-O bond originated from the elongation effect by the neighboring highly electron negative oxygen atoms at terminal C-H bond in Si-$CH_3$ of $1270cm^{-1}$. However, the Si-O bond was formed from the second ionic sites recombined after the dissociation of Si-$CH_3$ of $1270cm^{-1}$. The increase of the Si-O bond induced the redshift as the shift of peak in FTIR spectra because of the increase of right shoulder in main bond. These results mean that SiOC films become more stable and stronger than SiOC film with dominant C-O bond. So it was researched that the roughness was also decreased due to the high degree of amorphous structure at SiOC film with the redshift after annealing.

• Journal of Korean Society on Water Environment
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• v.27 no.1
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• pp.98-103
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• 2011

Photocatalysis using UV light and catalysts is an attractive low temperature and non-energy- intensive method for remediation of a wide range of chemical contaminants like chloroform (CF). Recently development of environmental friendly and sustainable catalytic systems is needed before such catalysts can be routinely applied to large-scale remediation or drinking water treatment. Titanium dioxide is a candidate material, since it is stable, highly reactive, and inexpensive. Diatoms are photosynthetic, single-celled algae that make a microscale silica shell with nano scale features. These diatoms have an ability to biologically fabricate $TiO_2$ nanoparticles into this shell in a process that parallels nanoscale silica mineralization. We cultivated diatoms, metabolically deposited titanium into the shell by using a two-stage photobioreactor and used this biogenic $TiO_2$ to this study. In this study we evaluated how effectively biogenic $TiO_2$ nanoparticles transform CF compared with chemically-synthesized $TiO_2$ nanoparticlesthe and effect of pretreatment of diatom-produced $TiO_2$ nanoparticles on photocatalytic transformation of CF. The rate of CF transformation by diatom-$TiO_2$ particles is a factor of 3 slower than chemically-synthesized one and chloride ion production was also co-related with CF transformation, and 79~91% of CF mineralization was observed in two $TiO_2$ particles. And the period of sonication and mass transfer due to particle size, evaluated by difference of oxygen tention does not affect on the CF transformation. Based on the XRD analysis we conclude that slower CF transformation by diatom-$TiO_2$ might be due to incomplete annealing to the anatase form.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.86-91
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• 2004

Transiton-metal gallides attract wide interest as a candidate for high-temperature structural materials. In a wide composition range, in which it was known that Co-Ga alloy have CsCl (B2) crystallographic structure, a systematic study on the correlation between physical properties and electronic structures of Co-gallides was performed. $Co_{l-x}Ga$ $_{x}$ alloys ($0.35\leq$x$\leq0.55$) were prepared by arc-melting method and were annealed at $1000 ^{\circ}C$ for 48hour to increase the homogeneity. In this composition range all the prepared alloys have the CsCl (B2) structure. The chemical states and the electronic structure were studied by using x-ray photoemission spectroscopy (XPS), and x-ray absorption near-edge structure (XANES), and exhibit different physical properties depending on the composition. During the annealing, a significant oxidation has happened and all the oxygen atoms are incorporated with the Ga atoms to form a $Ga_2O_3$ phase. In a view point of electronic structure, the $Co_{l-x}Ga$ $_{x}$ alloys were formed by the Ga(p) - Co(d) hybridization.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.291-297
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• 2007

The field emission properties of CNT-emitters coated with Ag-Cu alloy have been investigated. The vertical aligned multi-walled CNTs were synthesized by dc-plasma enhanced chemical vapor deposition (dc-PECVD) and the Ag-Cu alloy was coated by using dc-magnetron sputter. The morphology of alloy-coated and un-coated CNT-emitters was observed by using SEM and their field emission properties were also measured. Annealing the AgCu-coated CNTs at temperature more than ${\sim}700^{\circ}C$, the Ag-Cu alloy was diffused to and aggregated on the top of the CNT as a Q-tip. A significant progress on the field emission was not observed with coating Ag-Cu alloy on the CNTs, but a certain improvement in a resistance against oxygen gas was made confirmation. It seems to be due to inertness of Ag-Cu alloy on the CNTs.