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http://dx.doi.org/10.4313/JKEM.2011.24.6.473

Comparison of Stability on the Nano-crystalline Embedded InGaZnO and Amorphous InGaZnO Oxide Thin-film Transistors  

Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University)
Ahn, Byung-Du (LCD R&D Center, Samsung Electronics Co., Ltd.)
Rim, Yoo-Seung (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.6, 2011 , pp. 473-479 More about this Journal
Abstract
In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.
Keywords
IGZO; Oxide transistor; Nano-crystal; Constant current stress;
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