• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.466-473
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• 2018

Nickel oxide(NiO) thin films, nanorods, and carbon nanotube(CNT)/NiO core-shell nanorod structures are fabricated by sputtering Nickel at different deposition time on alumina substrates or single wall carbon nanotube templates followed by oxidation treatments at different temperatures, 400 and $700^{\circ}C$. Structural analyses are carried out by scanning electron microscopy and x-ray diffraction. NiO thinfilm, nanorod and CNT/NiO core-shell nanorod structurals of the gas sensor structures are tested for detection of $H_2S$ gas. The NiO structures exhibit the highest response at $200^{\circ}C$ and high selectivity to $H_2S$ among other gases of NO, $NH_3$, $H_2$, CO, etc. The nanorod structures have a higher sensing performance than the thin films and carbon nanotube/NiO core-shell structures. The gold catalyst deposited on NiO nanorods further improve the sensing performance, particularly the recovery kinetics.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.101-106
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• 2008

The $SnO_2$ thin films doped with Pd and CNT as $NO_2$ gas sensor were prepared by spin coating and then the $NO_2$ gas response of these films were evaluated under $1ppm{\sim}5ppm\;NO_2$ concentration and operating temperature of $200^{\circ}C$. It was found that the sensor resistance was increased with $NO_2$ exposure and $NO_2$ concentration. The 3wt% Pd doped sample showed a sensitivity of 26.5 which was 10 times higher than that of pure $SnO_2$. And also the sensitivity of CNT doped sample increased with CNT content and it had 72 when 0.225 wt% of CNT was added under 5ppm $NO_2$ concentration.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.406-410
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• 2006

The films of indium oxide $In_{2}O_{3}$) were deposited onto $SiO_{2}$ coated Si wafers by a thermal evaporation method. Substrate temperature was varied from $25^{\circ}C$ to $300^{\circ}C$. Deposition rate increased to $250^{\circ}C$ and then decreased rapidly. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films deposited at $250^{\circ}C$ were found to have a nanobelt structure. Resistor-type gas-sensors were fabricated with $In_{2}O_{3}$ films using Pt as electrodes. The resistance variation of $In_{2}O_{3}$ films with the concentration of NO gas was measured. The $In_{2}O_{3}$ films deposited at $250^{\circ}C$ showed the highest sensitivity to the NO gas.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.245-247
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• 1987

In this thesis, ZnO semiconductor gas sensors doped by the $Al^{3+}$ were fabricated by the miexed oxide method. The specimens were sintered for 5(hr) at $1000-1200^{\circ}C$ and the I-V, sensitivity were investigated in acetone gas or ammonia gas. As a result, I-V curves of specimens as a function of temperature variation showed characteristics of linear resistor that the current was proportional to the, temperature at constant voltage. For the sensitivity of acetone, 1Wt $Al^{3+}$-ZnO has the hight 0.91, ammonia gas, 2Wt $Al^{3+}$-ZnO specimen has the hight 0.90. Hence, the operating temperature of specimens were both $300^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2197-2202
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• 2014

In this paper, we report on an investigation of highly sensitive sensing performance of a hydrogen sensor composed of palladium (Pd) nanowires. The Pd nanowires have been grown by electrodeposition into nanochannels and liberated from the anodic aluminum oxide (AAO) template by dissolving in an aqueous solution of NaOH. A combination of photo-lithography, electron beam lithography and a lift-off process has been utilized to fabricate the sensor using the Pd nanowire. The hydrogen concentrations for 2% and 0.1% were obtained from the sensitivities (${\Delta}R/R$) for 1.92% and 0.18%, respectively. The resistance of the Pd nanowires depends on absorption and desorption of hydrogen. Therefore, we expect that the Pd nanowires can be applicable for detecting highly sensitive hydrogen gas at room temperature.

• Korean journal of food and cookery science
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• v.14 no.5
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• pp.541-546
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• 1998

Volatile flavor components in leaf and petiole of fresh Pleurospermum kamtschaticum H$\_$OFFM/ were extracted by SDE (simultaneous steam distillation and extraction) method using diethyl ether as solvent. Essential oils were analyzed by gas chromatography (GC) and combined gas chromatography-mass spectrometry (GC-MS). Identification of volatile flavor components was based on the Rl of GC and mass spectrum of GC-MS. A total of 31 components, including 15 hydrocarbons, 4 aldehydes, 1 ketone, 5 alcohols, 2 esters, 3 acids and 1 oxide were identified in the essential oils. (Z)-${\beta}$-Farnesene, (Z, E)-${\alpha}$-farnesene and farnesene were the major volatile flavor components in fresh Pleurospermum kamtschaticum. Volatile flavor patterns of Pleurospermum kamtschaticum were analyzed using electronic nose. Sensor T30/1 and PA2 that were sensitive to alcohols had the highest resistance for fresh Pleurospermum kamtschaticum. Resistance of six metal oxide sensors was decreased in dried sample compared with fresh one.

• Journal of Hydrogen and New Energy
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• v.16 no.1
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• pp.9-16
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• 2005

We studied the electrochromic properties of hydrated amorphous ruthenium oxide ($RuO_2{\cdot}xH_2O$) thin films using in-situ Raman spectroscopy during electrochemical charging/discharging cycles. We have found that the principal effect of hydrogen insertion into $RuO_2{\cdot}xH_2O$ is reduction of $Ru^{4+}\;to\;Ru^{3+}$, and not formation of new bonds involving hydrogen. We compared the changes in the Raman spectrum of a gasochromic $Pd/RuO_2{\cdot}xH_2O$ film as it is exposed to hydrogen gas with that of electrochemical hydrogen insertion. We tested the changes in the optical transmission of the $Pd/RuO_2{\cdot}xH_2O$ film when exposed to hydrogen gas.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.314-319
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• 2014

Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.407-412
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• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.