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http://dx.doi.org/10.5369/JSST.2006.15.6.406

NO gas-sensing properties of In2O3 nanobelt films prepared by thermal evaporation  

Choi, Mu-Hee (Department of Electrical Engineering & ERI., Gyeongsang Natl Univ.)
Ma, Tae-Young (Department of Electrical Engineering & ERI., Gyeongsang Natl Univ.)
Publication Information
Journal of Sensor Science and Technology / v.15, no.6, 2006 , pp. 406-410 More about this Journal
Abstract
The films of indium oxide $In_{2}O_{3}$) were deposited onto $SiO_{2}$ coated Si wafers by a thermal evaporation method. Substrate temperature was varied from $25^{\circ}C$ to $300^{\circ}C$. Deposition rate increased to $250^{\circ}C$ and then decreased rapidly. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films deposited at $250^{\circ}C$ were found to have a nanobelt structure. Resistor-type gas-sensors were fabricated with $In_{2}O_{3}$ films using Pt as electrodes. The resistance variation of $In_{2}O_{3}$ films with the concentration of NO gas was measured. The $In_{2}O_{3}$ films deposited at $250^{\circ}C$ showed the highest sensitivity to the NO gas.
Keywords
$In_{2}O_{3}$; thermal evaporation; nanobelt; gas-sensors;
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Times Cited By KSCI : 2  (Citation Analysis)
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