Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characterization of VO2 thick-film critical temperature sensors by heat treatment conditions

열처리조건에 따른 VO2 후막 급변온도센서의 특성연구

  • Song, K.H. (Department of Materials Science and Engineering, University of Seoul) ;
  • Yoo, K.S. (Department of Materials Science and Engineering, University of Seoul)
  • 송건화 (서울시립대학교 신소재공학과) ;
  • 유광수 (서울시립대학교 신소재공학과)
  • Published : 2007.11.30
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Abstract

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

Keywords

References

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  1. Temperature vs. Resistance Characteristics by Dopants of VO2Thick-Film Critical Temperature Sensors vol.23, pp.5, 2014, https://doi.org/10.5369/JSST.2014.23.5.337