• Toxicological Research
• /
• 제28권3호
• /
• pp.151-157
• /
• 2012

This paper describes the effects of thermally oxidized tallow on the serum lipids profile and radical scavenging activity (RSA) of the lipids extracted from the different tissues of the rabbits. Tallow was thermally oxidized at $130^{\circ}C$ for 9, 18, 27, 36 and 45 h respectively. Thermally oxidized tallow was fed to the local strain of Himalayan rabbits for one week. Results show that oxidation increases the formation of hydroperoxides and decrease the level of radical scavenging activity of the tallow. The rabbit serum lipids profile showed a dose dependent increase in triglyceride, total cholesterol and LDL-cholesterol. However, no statistically significant increase was observed in the HDL-cholesterol with an increase of oxidation time. Serum glucose and rabbits body weight decrease significantly (p < 0.05) and was highly correlated with the serum lipids profile. The percent RSA of the lipids extracted from the liver, brain and muscles tissues showed a significant decrease with respect to 0.5, 1.0 and 1.5 g/body weight as well as oxidation time. Data suggests that thermal oxidation and use of thermally oxidized beef tallow is harmful and therefore an alternative way of cooking should be used.

• 한국전기전자재료학회논문지
• /
• 제26권1호
• /
• pp.18-21
• /
• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• The Korean Journal of Ecology
• /
• 제17권3호
• /
• pp.251-260
• /
• 1994

Pseudotsuga menziesii 임상에서 질화작용의 억제제로서의 monoterpenoids의 역할을 연구하고자 토양에서의 질화작용과 식물체잎, 낙엽 및 무기토양에서의 monoterpenoids의 함량을 분석하였다. Pseudotsuga menziesii잎이나 임상에서 분석된 monoterpenoids는 대략 16종 이었으며, 그 중 ${\alpha}$-pinene, ${\beta}$-pinene, ${\gamma}$-terpinene 그리고 terpenolene이 대표적인 것들이었다. 임상에 있는 monoterpenoids의 양은 무기토양층에 비해 항상 많았으며, 계절적 변이가 있었으나 토양층은 항상 일정하였다. 질화작용 과정 중 ammonium oxidation 과정은 낙엽층이 보다 더 많은 저해를 받았으나, nitrite oxidation 과정은 두층별간 별 차이가 없었다. 또한 4가지 monoterpenoids(${\alpha}$-pinene, ${\beta}$-pinene, ${\gamma}$-terpinene, terpenolene)를 인위적으로 첨가한 토양에서의 질화작용에 역시 am-monium oxidation 과정은 심히 저해를 받는 반면 nitrite oxidation 과정은 저해를 받지 않는 것으로 나타났다. 이 같은 모든 결과들은 Pseudotsuga menziesii 임상에 있는 monoterpenoids의 영향으로 질화작용에 관여하는 미생물, 특히 Nitrosomonas europaes의 증식이 억제되어 am-monium oxidation 과정이 저해되었음을 시사한다.

• 한국자동차공학회논문집
• /
• 제21권4호
• /
• pp.135-143
• /
• 2013

In this study, we suggested effective countermeasure of biodiesel oxidation problems by investigating the oxidation degradation of biodiesels derived from variable resources and the level of oxidation stability of current distributing biodiesel blended fuels (2%) in Korea, and oxidation stability change according to storage time (for 3 month) and biodiesel blending ratio (2, 5, 7, 10%). By the composition analysis results of biodiesel from various resources which are possible to distribute in Korea, the biodiesel from animal fat has poor oxidation stability and cold performance, while the biodiesel from coconut and palm kernel which are considered as future potential raw material showed good oxidation stability and cold performance. The oxidation stability level of current distributing biodiesel blended fuels in Korea was excellent with showing over 30 hours (average 68 hours) stability, but the oxidation stability of the blended fuel with animal fat biodiesel having poor oxidation property (1.22 hours) was rapidly decreased to below 32 hours by mixing only 2%. Therefore, we have to pay attention to quality control of oxidation property, because the oxidation stability problem can be caused by increasing biodiesel blending ratio and diversifying raw materials those have worse property.

• Nuclear Engineering and Technology
• /
• 제41권2호
• /
• pp.163-170
• /
• 2009

In order to evaluate high-temperature oxidation behavior of the advanced alloy cladding under LOCA conditions, isothermal oxidation tests in steam were performed with cladding specimens prepared from high burnup PWR fuel rods that were irradiated up to 79 MWd/kg. Cladding materials were $M5^{(R)}$ and $ZIRLO^{TM}$, which are Nb-containing alloys. Ring-shaped specimens were isothermally oxidized in flowing steam at temperatures from 1173 to 1473 K for the duration between 120 and 4000s. Oxidation rates were evaluated from measured oxide layer thickness and weight gain. A protective effect of the preformed corrosion layer is seen for the shorter time range at the lower temperatures. The influence of pre-hydriding is not significant for the examined range. Alloy composition change generally has small influence on oxidation in the examined temperature range, though $M5^{(R)}$ shows an obviously smaller oxidation constant at 1273 K. Consequently, the oxidation rates of the high burnup $M5^{(R)}$ and $ZIRLO^{TM}$ cladding are comparable or lower than that of unirradiated Zircaloy-4 cladding.

• Bulletin of the Korean Chemical Society
• /
• 제34권9호
• /
• pp.2685-2690
• /
• 2013

The activities of Au-modified Cu electrodes toward glucose oxidation are evaluated according to their fabrication conditions and physico-chemical properties. The Au-modified Cu electrodes are fabricated by the galvanic displacement of Au on a Cu substrate and the characteristics of the Au particles are controlled by adjusting the displacement time. From the glucose oxidation tests, it is found that the Au modified Cu has superior activity to the pure Au or Cu film, which is evidenced by the negative shift in the oxidation potential and enhanced current density during the electrochemical oxidation. Though the activity of the Au nanoparticles is a contributing factor, the enhanced activity of the Au-modified Cu electrode is due to the increased oxidation number of Cu through the electron transfer from Cu to more electronegative Au. The depletion of electron in Cu facilitates the oxidation of glucose. The stability of the Au-modified Cu electrode was also studied by chronoamperometry.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.449-452
• /
• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• 한국재료학회지
• /
• 제12권9호
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 한국산업융합학회 논문집
• /
• 제27권2_2호
• /
• pp.397-402
• /
• 2024

Silicon carbide materials undergo an oxidation reaction in a high-temperature oxidizing environment and show different characteristics depending on the test temperature and time. In particular, the added oxides form a secondary phase within the sintering process and exhibit different oxidation characteristics depending on the added sintering materials. Therefore, to evaluate the oxidation characteristics, the weight of the test piece and the thickness of the oxidation layer were observed, and the structure and oxidation characteristics of the material were analyzed using SEM. SEM observation showed that an oxide layer was formed on the surface of the liquid sintered silicon carbide material after it was oxidized at 1200 ℃, 1300 ℃, and 1400 ℃ for 10 hours, respectively. Then, a bending test was performed at each temperature on the test piece with the oxidation layer formed to evaluate the change in flexural strength. The strength was 466.6 MPa at 1200 ℃, 363.1 MPa at 1300 ℃, and 350.8 MPa at 1400 ℃. Al₂O₃-SiO₂ oxidized at 1200 ℃ for 10 hours showed an increase in strength of about 21.0 MPa compared to the data before the oxidation test.

• 공업화학
• /
• 제8권3호
• /
• pp.395-402
• /
• 1997

ECR 산소 플라즈마를 사용한 건식산화법에 의해 두 가지 실리콘 배향에 대하여 실리콘 산화막을 제조한 후 Deal-Grove(D-G)모델과 Wolters-Zegers-van Duynhoven (W-Z)모델에 적용하여 시간에 따르는 막 두께의 변화를 살펴보았으며 산화속도와 산화막의 표면 morphology의 상관관계를 조사하였다. 실리콘 산화막의 두께는 Si(100)과 Si(111) 모두 반응 시간이 짧은 영역에서 선형적으로 증가하였으나 반응시간이 경과함에 따라 화학반응 속도 보다 산화막을 통과하는 반응성 라디칼들의 확산이 율속단계로 작용하여 산화속도의 증가폭이 다소 둔화되었다. D-G모델과 W-Z모델에서 확산 및 반응속도는 Si(100)보다 Si(111)이 더 큰 값을 갖기 때문에 반응속도는 1.13배 더 크게 나타났으며 이들 모델은 실험 값과 잘 일치하였다. 표면 morphology는 산화 속도가 증가해도 식각현상이 일어나지 않는 실험 조건에서 산화막의 표면 조도가 일정하였으며, 기판의 위치가 하단 전자석에 근접하고 마이크로파 출력이 증가하여 식각현상이 일어나는 실험 조건에서 표면 조도는 산화속도와 관계없이 크게 나타났다.