Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation

Rapid Thermal Oxidation 기반의 표면 보호막을 이용한 n-type 실리콘 태양전지의 제작과 전기적 특성 분석

  • Ryu, Kyungsun (School of Electrical and Computer Engineering, Georgia Institute of Technology) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 류경선 (조지아공과대학교 전기컴퓨터공학부) ;
  • 김성진 (충북대학교 전자정보대학)
  • Received : 2012.10.04
  • Accepted : 2012.12.13
  • Published : 2013.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

Keywords

References

  1. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, J. Appl. Phys., 90, 2397 (2001). https://doi.org/10.1063/1.1389076
  2. D. Macdonald and L. J. Geerligs, Appl. Phys. Lett., 85, 4061 (2004). https://doi.org/10.1063/1.1812833
  3. J. E. Cotter, J. H. Guo, P. J. Cousins, M. D. Abbott, F. W. Chen, and K. C. Fisher, IEEE Trans. Elec. Dev., 53, 1893 (2006). https://doi.org/10.1109/TED.2006.878026
  4. C. L. Andre, J. A. Carlin, J. J. Boeckl, D. M. Wilt, M. A. Smith, A. J. Pitera, M. L. Lee, and S. A. Ringel, IEEE Trans. Elec. Dev., 52, 1055 (2005). https://doi.org/10.1109/TED.2005.848117
  5. Z. Wu, T. Song, Tao, Y. Jin, and B. Sun, Appl. Phys. Lett., 99, 143306 (2011). https://doi.org/10.1063/1.3646547
  6. J. Schmidt, A. G. Aberle, and R. Hezel, Presented at the 26th IEEE PVSC (Anaheim, 1997)
  7. H. Jiang, S. Seyedmohammadi, A. Shaikh, and E. Graddy, 37th IEEE Photovoltaic Specialists Conference (U.S.A., 2011) p. 001458.
  8. J. Schmidt, F. M. Schuurmans, W. C. Sinke, S. W. Glunz, and A. G. Aberle, Appl. Phys. Lett., 71, 252 (1997). https://doi.org/10.1063/1.119512
  9. R. Singh, J. Appl. Phys., 63, R59 (1988). https://doi.org/10.1063/1.340176