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http://dx.doi.org/10.4313/JKEM.2013.26.1.18

N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation  

Ryu, Kyungsun (School of Electrical and Computer Engineering, Georgia Institute of Technology)
Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.1, 2013 , pp. 18-21 More about this Journal
Abstract
$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.
Keywords
n-type solar cell; Rapid thermal oxidation;
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