• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.2
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• pp.123-128
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• 2020

A low phase noise phase locked loop (PLL) with negative feedback loop including frequency variation sensing circuit (FVSC) has been proposed. The FVSC senses the frequency variation of voltage controlled oscillator output signal and controls the volume of electric charge in loop filter capacitance. As the output frequency of the phase locked loop increases, the FVSC reduces the loop filter capacitor charge. This causes the loop filter output voltage to decrease, resulting in a phase locked loop output frequency decrease. The added negative feedback loop improves the phase noise characteristics of the proposed phase locked loop. The size of capacitance used in FVSC is much smaller than that of loop filter capacitance resulting in no effect in the size of the proposed PLL. The proposed low phase noise PLL with FVSC is designed with a supply voltage of 1.8V in a 0.18㎛ CMOS process. Simulation results show the jitter of 273fs and the locking time of 1.5㎲.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.535-541
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• 2016

A low phase noise META-VCO based-on meta-structure was designed using 65 nm CMOS process. We used a meta-structure to get good phase noise characteristics. The measured phase noises are -67.8 dBc/Hz, -96.37 dBc/Hz, and -107.37 dBc/Hz at 100 kHz, 1 MHz, and 10 MHz offset respectively. The META-VCO operates 8.45~8.77 GHz according to VCTRL, and the output power is -19.12 dBm. The power consumption is 28 mW with 1.2-V supply voltage. The calculated FOM is -140.76 dBc/Hz.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.246-248
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• 2007

This paper presents fast locking PLL(Phase Locked Loop) that can improve a jitter noise characteristics and acquisition process by designing a PFD(Phase Frequency Detector) circuit. The conventional PFD has not only a jitter noise caused from such a demerit of the wide dead zone and duty cycle, but also a long delay interval that makes a high speed operation unable. The advanced PFD circuit using the TSPC(True Single Phase Clocking) circuit is proposed, and it has excellent performances such as 1.75us of locking time and independent duty cycle characteristic. It is fabricated in a 0.018-${\mu}m$ CMOS process, and 1.8v supply voltage, and 25MHz of input oscillator frequency, and 800MHz of output frequency and is simulated by using ADE of Cadence.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.152-158
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• 2004

A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.212-215
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• 2016

In this paper, a 5.08 GHz Ring Voltage Controlled Oscillator(Ring VCO) was implemented using $0.18{\mu}m$ standard CMOS technology. The proposal Ring VCO is 3-stage structure. This research confirmed that the each stage's different transistor size ratio influence the current change and alter power consumption consequentially. This circuit is formed to control the current thereby adding the Current Mirror and to tune the frequency by supplying control voltage. It has an 65.5 %(1.88~5.45 GHz) tuning range. The measured output power is -0.30 dBm. The phase noise is -87.50 dBc/Hz @1 MHz offset with operating frequency of 5.08 GHz fundamental frequency. The total power consumption of Ring VCO is 31.2 mW with 2.4 V supply voltage.

• Journal of IKEEE
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• v.24 no.4
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• pp.975-981
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• 2020

A 10 GHz LC voltage-controlled oscillator (VCO), which controls an amplitude of output signal, is proposed to improve the phase noise. The proposed amplitude control circuit for the LC VCO consists of a peak detector, an amplifier, and a current source. The peak detector is performed detecting the lowest voltage of the output signal by using two diode-connected NMOSFET and a capacitor. The proposed 10 GHz LC VCO with an amplitude control circuit for output signal is designed using a 55 nm CMOS process with a supply voltage of 1.2 V. Its area is 0.0785 ㎟. The amplitude control circuit used in the proposed LC VCO reduces the amplitude variation 242 mV generated in the output signal of the conventional LC VCO to 47 mV. Furthermore, it improves the peak-to-peak time jitter from 8.71 ps to 931 fs.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.2
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• pp.107-115
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• 1997

In this paper, a 23 GHz push-push oscillator was designed and fabricated for 23 GHz point-to-point communication using split ring resonator. The split ring resonator was equivalent circuit and numerical method of MPIE(Mixed Potential Integral Equation). The analysis of split ring resonator which coupled between microstrip lines was carried out with transmission-mode using this results. The fabricated oscillator showed the output power of 4 dBm, the 1'st harmonic suppression of -20 dBc, the 3rd harmonic suppression of -34 dBc, a SSB phase noise of -109 dBc / Hz at 1MHz offset frequency from the carrier was achieved and 1.4 percents efficiency at 23 GHz. The experimental outputs were in good results with the theoretical and simulated results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.9
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• pp.1710-1718
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• 1994

In this paper, a broadband tunable YIG(Yittrium Iron Garnet) oscillator is designed and fabricated. To design an YTO(YIG Tuned Oscillator), a suitable YIG resonator is selected according to the design oscillation range and its equivalent R, L, C resonant circuit parameters are obtained through the measurement of its resonance characteristic. Using the equivalent circuit, the wideband topology which suppresses the parasitic oscillation is selected and implemented. The designed circuit is simulated by HBT(Harmoic Balance Technique) using EEsof's jOMEGA. The YTO thus fabricated has the wide oscillation range from 1.4 GHz to 4 GHz, and its linearity is 0.5% in the oscillation range. The phase noise is below 105dBc at 100kHz offset.

• Journal of information and communication convergence engineering
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• v.13 no.2
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• pp.139-143
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• 2015

A push-push voltage controlled dielectric resonator oscillator (VCDRO) with a modified frequency tuning structure using broadside couplers is investigated. The push-push VCDRO designed at 16 GHz is manufactured using a low temperature co-fired ceramic (LTCC) technology to reduce the circuit size. The frequency tuning structure using a broadside coupler is embedded in a layer of the A6 substrate by using the LTCC process. Experimental results show that the fundamental and third harmonics are suppressed above 15 dBc and 30 dBc, respectively, and the phase noise of push-push VCDRO is -97.5 dBc/Hz at an offset frequency of 100 kHz from the carrier. The proposed frequency tuning structure has a tuning range of 4.46 MHz over a control voltage of 1-11 V. This push-push VCDRO has a miniature size of 15 mm×15 mm. The proposed design and fabrication techniques for a push-push oscillator seem to be applicable in many space and commercial VCDRO products.