• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.128-136
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• 2001

This paper evaluates the performance of an optic link in a frequency conversion based fiber-radio system. The proposed link structure simplifies a BS(base station) via making the MMW(millimeter wave) optical pilot tone generated in the CS(control station) be used in the uplink as well as in the downlink. To acquire the optical pilot tone, an EOM(electro-optic modulator) in the CS is biased in three different ways, i.e., MAB(maximum bias), MIB(minimum bias), QB(quadrature bias). We, depending on the biasing of the EOM, evaluate the link performances in two cases; one is for constant laser source power and the other for constant received DC optical power at a PD(photo detector). Based on the simulation results on the downlink CNR and the uplink SFDR(spurious free dynamic range), we finally deduce the effective EOM biasing for each case.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.169-173
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• 2009

We studied driving characteristics according to the ratio of mass and charging (m/q) value for charged toner particles with black and yellow color in charged particle type display panel. After biasing rectangle pulse to the transparency electrodes of putted panel with toner particles, its response time and contrast ratio are simultaneously measured using a laser as a optical source, photodiode as a detector and reflective system. As a results, contrast ratio is largest at the shortest response time region which is different to the particle because of m/q. We proposed relational equation for response time, m/q, cell gap and biasing voltage. It has not been studied and reported to analyze the relationship of response time, biasing voltage, lumping phenomena, cell gap, and contrast ratio for toner particle type display.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.844-849
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• 2009

The moving behavior of particle with voltage biasing is studied by analyzing the displacement current generated in electrodes and the drift current by moving particles in cell gap. These currents are ascertained by optical reflectivity on the panel. We obtained the saturated current after a peak in threshold voltage which is coincide with reflectivity of 80%. These saturated optical reflectivity and its drift current offer optimum q/m of particles and driving voltage and can be analytically studied on grey scale methods. Especially regional analysis is useful to aging and driving voltage and the understanding of operating mechanism of charged particle type display.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.7A
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• pp.672-677
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• 2007

A novel method for stabilizing the bias of an Electro-Optic Mach-Zehnder modulator has been proposed and demonstrated to maximize the switching extinction ratio in burst mode packet traffic. By sampling and minimizing the off-level output power of the modulator, a high extinction optical gate switch in obtain regardless of the variation of the packet traffic density.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.151-155
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• 2008

Using pentacene field effect transistors (FETs) with Au source and drain electrodes, electron injection from the Au electrodes into the pentacene was investigated. The capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements were employed. Electron injection from the Au electrodes was suggested by the hysteresis behavior with the C-V characteristics and slowly decaying SHG signal under DC biasing, A mechanism of hole-injection assisted by trapped electrons is proposed. To confirm electron injection process, light-emitting behavior under the application of AC applied voltage was observed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.42-42
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• 2001

본 논문은 주파수 천이를 적용시킨 광무선(fiber-radio)시스템의 광링크부에 대한 성능분석을 한다. 제시된 광링크부는 CS(control station)에서 얻어진 밀리미터파 대역 광파일럿톤(optical pilot tone)이 하향링크뿐 아니라 상향링크에도 공급되도록 하여 BS(base station)의 구조를 간단히 하였다. 광파일럿톤을 얻기 위해 CS의 EOM(electro-optic modulator)을 MAB(maximum bias), MIB(minimum bias), QB(quadrature bias)로 바이어스를 달리할 수 있으며 각각의 경우에 따라 링크의 성능을 분석한다. 분석은 레이저 광원의 전력이 일정한 경우와 PD(photo detector)에 수신되는 광 DC 전력이 일정한 경우에 대해서 행하여지며 각 경우에 대해서 최적의 하향링크 CNR 및 상향링크 SFDR(spurious free dynamic range)을 얻기 위해 효과적인 바이어스 방식을 제시한다

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.123-129
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• 2020

We analyzed the drift current by charged particles according to the loading methods applied into a closed cell by electronic ink at a reflective-type display panel using an electrophoretic mechanism. For this experiment, various panels were fabricated with injection voltages for electronic ink taking values in the range -4~0 V. The size of each cell was 220 ㎛ × 220 ㎛ and height of the barrier rib was 54.28 ㎛. The electronic ink was fabricated by mixing electrically neutral fluid and single-charge white particles. Drift current was measured by moving charged particles. A biasing voltage of 6 V was applied to the display panel. As a result, the drift current was proportional to the injection voltage for electronic ink, but it decreased in case of an injection voltage above -3 V. Our experimentation ascertained that the concentration of charged particles injected into closed cells is controlled by the injection voltage and the selective injection of charged particles above movable q/m is possible.

• Journal of The Korean Astronomical Society
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• v.38 no.2
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• pp.303-306
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• 2005

Transient luminous events (TLEs; sprites, elves, jets and etc.) are lightning-related optical flashes occurring above thunderstorms. Since the first discovery of sprites in 1989, scientists have learned a great deal about the morphological, spectroscopic and electromagnetic characteristics of TLEs through ground and spacecraft campaigns. However, most of the TLE studies were based on events recorded over US High Plains. To elucidate the possible biasing effects, space-borne observations are needed and have their merits. Imager of sprites and Upper Atmospheric Lightning (ISUAL) on the FORMOSAT-2 satellite is the first instrument to carry out a true global measurement of TLEs from a low- earth orbit. In this short paper, we apply a common astronomical data analysis technique, two-color diagram, on the ISUAL spectrophotometer (SP) data. By choosing appropriated bandpasses and converting the measured flux of TLEs into the unit of magnitude, two-color diagrams of TLEs can be constructed. We demonstrate that two-color diagrams, which were constructed from the narrow-band spectrophotometer data, can be used to classify different types of TLEs and trace their temporal evolution. The amount of reddening due to Earth's atmosphere can also be estimated from two-color diagrams assembled from the broad-band spectrophotometer data.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.