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http://dx.doi.org/10.4313/TEEM.2008.9.4.151

Study of Electron Injection of Pentacene Field Effect Transistor with Au Electrodes by C-V and SHG Measurements  

Lim, Eun-Ju (Department of Physical Electronics, Tokyo Institute of Technology)
Manaka, Takaaki (Department of Physical Electronics, Tokyo Institute of Technology)
Tamura, Ryosuke (Department of Physical Electronics, Tokyo Institute of Technology)
Ohshima, Yuki (Department of Physical Electronics, Tokyo Institute of Technology)
Iwamoto, Mitsumasa (Department of Physical Electronics, Tokyo Institute of Technology)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.4, 2008 , pp. 151-155 More about this Journal
Abstract
Using pentacene field effect transistors (FETs) with Au source and drain electrodes, electron injection from the Au electrodes into the pentacene was investigated. The capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements were employed. Electron injection from the Au electrodes was suggested by the hysteresis behavior with the C-V characteristics and slowly decaying SHG signal under DC biasing, A mechanism of hole-injection assisted by trapped electrons is proposed. To confirm electron injection process, light-emitting behavior under the application of AC applied voltage was observed.
Keywords
Pentacene FET; Maxwell-Wagner model; SHG; Trapped charge;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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