• Proceedings of the KWS Conference
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• 2006.05a
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• pp.209-211
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• 2006

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.93-100
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• 2003

The continuing scaling trend in microelectronic circuit technology has a significant impact on the different IC interconnection and packaging technologies. These latter technologies have not kept pace with the IC scaling trends, resulting in a so-called“interconnect technology gap”. Multilayer thin film technology is proposed as a“bridge”- technology between the very high density IC technology and the coarse standard PCB technology. It is also a key enabling technology for the realisation of true“System-in-a-Package”(SIP) solutions, combining multiple“System-on-a-Chip”(SOC) IC's with other components and also integrating passive components in its layers. A further step is to use this technology to realise new functionalities on top of active wafers. These additional“above-IC”processed layers may e.g. be used for low loss, high speed on chip interconnects, clock distribution circuits, efficient power/ground distribution and to realize high Q inductors on chip.

• ETRI Journal
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• v.36 no.3
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• pp.367-373
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• 2014

With high bandwidth, low interference, and low power consumption, optical network-on-chip (ONoC) has emerged as a highly efficient interconnection for the future generation of multicore system on chips. In this paper, we propose a new path-setup method for ONoC to mitigate contentions, such as packets, by recycling the setup packet halfway to the destination. A new, strictly non-blocking $6{\times}6$ optical router is designed to support the new method. The simulation results show the new path-setup method increases the throughput by 52.03%, 41.94%, and 36.47% under uniform, hotspot-I, and hotspot-II traffic patterns, respectively. The end-to-end delay performance is also improved.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.155-158
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• 2001

A 640Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM, 0.25um CMOS and optical WDM interconnection is fabricated for future N-ISDN services. A 40 layer, 160mm$\times$114mm ceramic MCM realizes the basic ATM switch module with 80Gbps throughput. The basic unit ATM switch module with 80Gb/s throughput. The basic unit ATM switch MCM consists of in 8 chip advanced 0.25um CMOS VLSI and 32 chip I/O Bipolar VLSIs. The MCM employs an 40 layer, very thin layer ceramic MCM and a uniquely structured closed loop type liquid colling system is adopted to cope with the MCM's high-power dissipation of 230w. The MCM is Mounted on a 32cm$\times$50cm mother board. A three stage ATM switch is realized by optical WDM interconnection between the high-performance MCM.

• ETRI Journal
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• v.38 no.6
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• pp.1240-1249
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• 2016

With the number of IP cores in a multicore system-on-chip increasing to up to tens or hundreds, the role of on-chip interconnection networks is vital. We propose a networks-on-chip-style bus network as a compromise and redefine the exploration problem to find the best IP tiling patterns and communication path combinations. Before solving the problem, we estimate the time complexity and validate the infeasibility of the solution. To reduce the time complexity, we propose two fast exploration algorithms and develop a program to implement these algorithms. The program is executed for several experiments, and the exploration time is reduced to approximately 1/22 and 7/1,200 at the first and second steps of the exploration process, respectively. However, as a trade-off for the time saving, the time cost (TC) of the searched architecture is increased to up to 4.7% and 11.2%, respectively, at each step compared with that of the architecture obtained through full-case exploration. The reduction ratio can be decreased to 1/4,000 by simultaneously applying both the algorithms even though the resulting TC is increased to up to 13.1% when compared with that obtained through full-case exploration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• ETRI Journal
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• v.37 no.2
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• pp.387-394
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• 2015

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.1-10
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• 2020

This paper reviews the recent development of electronic textile technology, mainly focusing on chip-textile bonding. Before the chip-textile bonding, a circuit on the textile should be prepared to supply the electrical power and signal to the chip mounted on the fabrics. Either embroidery with conductive yarn or screen-printing with the conductive paste can be applied to implement the circuit on the fabrics depending on the circuit density and resolution. Next, chip-textile bonding can be performed. There are two choices for chip-textile bonding: fixed connection methods such as soldering, ACF/NCA, embroidery, crimping, and secondly removable connection methods like a hook, magnet, zipper. Following the chip-textile bonding process, the chip on the textile is generally encapsulated using PDMS to ensure reliability like water-proof.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.25-29
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• 2009

High temperature high humidity and thermal shock reliability tests were performed for the board level COB(chip-on-board) flip chip packages using self-formulated and commercial NCPs(non-conductive pastes) to ensure the performance of NCP flip chip packages. It was considered that the more smaller fused silica filler in prototype NCPs is more favorable for high temperature high humidity reliability. The failure of NCP interconnection was affected by the expansion of epoxy due to moisture absorption rather than the fatigue due to thermal stress. It was considered that the NCP having more higher adhesive strength seems to be more favorable to increase the thermal shock reliability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.736-744
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• 2016

Network on chip (NoC) is an emerging technology in the field of multi core interconnection architecture. The routers plays an essential components of Network on chip and responsible for packet delivery by selecting shortest path between source and destination. State-of-the-art NoC designs used routing table to find the shortest path and supports four ports for packet transfer, which consume high power consumption and degrades the system performance. In this paper, the multi port multi core router architecture is proposed to reduce the power consumption and increasing the throughput of the system. The shared buffer is employed between the multi ports of the router architecture. The performance of the proposed router is analyzed in terms of power and current consumption with conventional methods. The proposed system uses Modelsim software for simulation purposes and Xilinx Project Navigator for synthesis purposes. The proposed architecture consumes 31 mW on CPLD XC2C64A processor.