• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.133-133
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• 2005

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.161-164
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• 1998

Erbium doped garnet crystals were grown by Czochralski method. Relationshipes between crystal quality and crystal growth factors such as pulling rate, rotation rate and concentration of active ions and sensitizers were investigated. Optimum pulling and rotation rate for high quality Er:YAG crystal were 1 mm/hr and 20 rpm and for Er,Cr:YSGG crystal 2-4 mm/hr and 10 rpm respectively. The size of the crystals grown was up to 20-30 mm in diameters and 95-135 mm in length. Er:YAG crystal grown under the nitrogen atmosphere was pink and transparent and Er,Cr:YSGG under the 98% {{{{ { N}_{ 2} }}}} and 2% {{{{ { O}_{2 } }}}} was dark green and transparent. Under the polarizing microscopic observations with crossed polar, striations and {211} core facets were detected. Spectroscopic properties for Er,Cr:YSGG laser rods with <111> axis, 80 mm in length and 6.3 mm in diameter for medical laser applications of 2.79 ${\mu}$m wavelength were manufactured and then laser oscillation was achieved.

• 대한화학회지
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• 제59권5호
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• pp.429-433
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• 2015

The binding ability and hydrogen storage capacity of nitrogen doped carbon nanotube with divacancy (4NDCN_xNT) that is decorated with transition metals was investigated based on density functional theory calculations. Results indicate that scandium shows an ideal reversible hydrogen binding capability with promising system-weight efficiency compared with other transition metals when functionalized with 4ND-CN_xNT. The (Sc/4ND)₁₀-CN_xNT can store up to 50H₂ molecules, corresponding to a maximum gravimetric density of 5.8 wt%. Detailed structural stability and electronic properties were reported as hydrogen molecules were absorbed. It takes about 0.16 eV/H₂ to add one H₂ molecule, which assures reversible storage of H₂ molecules under ambient conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.59-61
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• 1989

The cell parameters of the sintered CdS/CdTe solar cells in which te CuCl$_2$was added in the carbon paste after the sintering of the CdS/CdTe composites an were annealed at 35$0^{\circ}C$ for 10 min in nitrogen are investigated. Voc and FF do not change significantly as the CuCl$_2$increasing up to 500 ppm, Jsc increases with futher increase in copper. The hole concentration, determined by C-V measurement, increases to $1.5\times$10$^{16}$ ㎤ as the copper increased to 25 ppm and then stays at about the same value with further increase in copper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.90-90
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• 2010

We investigated the modification of optical response properties of titanium dioxide (TiO2) coatings on the ceramic water-purification filters by using ultraviolet-visible absorption spectroscopy and X-ray diffraction. The TiO2 coatings were prepared on ceramic substrate by e-beam evaporation method. These amorphous TiO2 were turned into anatase phase by heat treatment at $700^{\circ}C$ for 2 hours. The doping of N atoms into the TiO2 coatings was done by using 70KeV of N＋ ion implantation with the dose of $1.0{\times}1017$ ions/cm2, followed by post-irradiation heat treatment at $550^{\circ}C$ for 2 hours. Methylene blue test of TiO2 coatings to solar irradiation showed that the post-evaporation heated TiO2 was photocatalytic and N-doped TiO2 reacted to the visible part of solar irradiation.

• 한국결정성장학회지
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• 제10권1호
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• Korean Membrane Journal
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• 제9권1호
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• pp.43-51
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• 2007

This paper describes the preparation and characterization of two kinds of fluorinated polybenzimidazole (PBI)s which can be potentially used for phosphoric acid-doped, high-temperature polymer electrolyte membrane fuel cells. Two kinds of perfluorocyclobutane (PFCB)-containing monomers were prepared via following synthetic steps; after fluoroalkylation of methyl 3-(hydroxy) benzoate and methyl 4-(hydroxy) benzoate with 1,2-dibromotetrafluoroethane and subsequent Zn-mediated dehalogenation, these compounds were cyclodimerized at $200^{\circ}C$ affording the ester-terminated monomers containing PFCB ether groups. The synthesized intermediates and monomers were characterized using FT-IR, $^1H-NMR,\;^{19}F-NMR$, and mass spectroscopy. The fluorinated PBIs were then successfully prepared through the solution polycondensation of the monomers and 3,3'-diaminobenzidine in polyphosphoric acid. Compared with traditional PBI, the glass transition temperatures of the fluorinated PBIs were obtained at $262^{\circ}C\;and\;269^{\circ}C$ which are lower than that of PBI and their initial degradation temperatures were still high over $400^{\circ}C$ under nitrogen. The fluorinated PBIs showed higher d-spacing values and improved solubility in several organic solvents as well as phosphoric acid, which confirmed they could be good candidates for the high temperature fuel cell membranes.

• 센서학회지
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• 제26권6호
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국지하수토양환경학회지:지하수토양환경
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• 제28권6호
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• pp.24-32
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• 2023

Continuous increase of domestic meat consumption has inevitably increased generation of livestock manure and caused severe environmental impacts on ecosystem and human beings. This work produced biochar from cattle manure samples with different composting aging stages and investigated the properties of the produced biochar. The result of thermogravimetric analysis showed that thermal decomposition of the manure initiated at <600℃. The biochar yield was higher for the manure with a longer pre-composting period due to the elimination of microbially metabolized carbons during composting process. The result of FT-IR analysis showed that the number of surface functional groups were reduced during pyrolysis while enhancing the graphitic structures of the carbon framework. Manure samples tended to leach out N and P in leaching tests, with its amount higher for aged one than fresh one. However, their leaching was substantially suppressed when the manure was produced into biochar. In XPS spectra, it was found that N and P in the manure incorporated into biochar surface to form N-doped graphitic carbon and P-N-moieties, respectively. The findings of this work suggest that the thermochemical process can be of a viable option to valorize into biochar for potential environmental applications as well as to alleviate undesired nutrients loading to the environment.