Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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In-situ P-doped LPCVD Poly Si Films as the Electrodes of Pressure Sensor for High Temperature Applications

고온용 압력센서 응용을 위한 in-situ 인(P)-도핑 LPCVD Poly Si 전극

  • Choi, Kyeong-Keun (National Institute for Nanomaterials Technology (NINT, Pohang University of Science and Technology (POSTECH))) ;
  • Kee, Jong (National Institute for Nanomaterials Technology (NINT, Pohang University of Science and Technology (POSTECH))) ;
  • Lee, Jeong-Yoon (National Institute for Nanomaterials Technology (NINT, Pohang University of Science and Technology (POSTECH))) ;
  • Kang, Moon Sik (Innersensor)
  • 최경근 (포항공과대학교 나노융합기술원) ;
  • 기종 (포항공과대학교 나노융합기술원) ;
  • 이정윤 (포항공과대학교 나노융합기술원) ;
  • 강문식 ((주)이너센서)
  • Received : 2017.11.20
  • Accepted : 2017.11.28
  • Published : 2017.11.30
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Abstract

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

Keywords

References

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