1 |
J.-S. Lee and K.-K. Choi, "Metal-Semiconductor-Metal Photodetector Fabricated on Thin Polysilicon Film", J. Korean Inst. Electr. Electron. Mater. Eng. Vol. 30, No. 5, pp. 280-287, 2017.
|
2 |
Reza Ghodssi, Pinyen Lin, MEMS Materials and Processes Handbook, Springer, New York, pp. 53-65, 2011.
|
3 |
M. Biebl, G.T. Mulhern, R.T. Howe, "In situ phosphorusdoped polysilicon for integrated MEMS", technical digest. 8th International Conference on Solid-State Sensors and Actuators, Eurosensors IX, Stockholm, Sweden, pp. 198-201, 1995.
|
4 |
T. Dinh, H.-P. Phan,.D. V. Dao,P.Woodfield,A. Qamara and N.-T. Nguyena, "Graphite on paper as material for sensitive thermoresistive sensors", J. Mater. Chem. C, 3, pp. 8776-8779, 2015.
DOI
|
5 |
Y. Huang, A. S. S. Vasan, R. Doraiswami, M. Osterman, "MEMS Reliability Review", IEEE Transactions on Device and Materials Reliability, Vol. 12, pp. 482-493, 2012.
DOI
|
6 |
A. A. S. Mohammed, W. A. Moussa and E.Lou, " High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity", Sensors, Vol 11, pp.1819-1846, 2011.
DOI
|
7 |
V.Mosser, J. Suski, J. Goss and E. Obermeier," Piezoresitive pressure sensors based on Polycrystalline silicon", Sensors and Actuators, Vol. 28, pp. 113-132, 1991.
DOI
|
8 |
S. Guo, H. Eriksen, K. Childress, A. Fink, M. Hoffman, "High temperature smart-cut SOI pressure sensor", Sensors and Actuators A, Vol. 154, pp. 255-260, 2009.
DOI
|
9 |
H-D. Ngo, B. Mukhopadhyay,O. Ehrmann and K.-D. Lang, "Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments", Sensors, Vol. 15, pp. 20305-20315, 2015.
DOI
|
10 |
R.T. Howe, R.S. Muller: Stress in polysilicon and amorphous silicon thin films, J. Appl. Phys. Vol. 54, pp. 4674-4675, 1983.
DOI
|
11 |
X. Zhang, T.Y. Zhang, M. Wong, Y. Zohar, "Rapid thermal annealing of polysilicon thin films", J. Microelectromech. Syst. Vol. 7, pp. 356-364, 1998.
DOI
|
12 |
H. Puchner and S. Selberherr, "An Advanced Model for Dopant diffusion in polysilicon:, IEEE Tras. on Elec. Dev. Vol. 42, pp. 1750-1755, 1995.
DOI
|
13 |
L. Cao, T. S. Kim, S. C. Mantell, D. L. Polla, "Simulation and fabrication of piezoresistive membrane type MEMS strain sensors", Sensors and Actuators, Vol. 80, pp. 273-279, 2000.
DOI
|
14 |
E. Boulais, J. Fantoni, A. Chateauneuf, Y. Savaria, "Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film Resistors", IEEE TRAN. ON ELEC. DEV., Vol. 58, No. 2, pp. 572-575, 2011.
DOI
|
15 |
H. Schafer, V. Graeger and R. Kob, "Temperature- independent pressure sensors using polyscrystalline silicon gauges", Sensors and Actuators, Vol. 17, pp. 521-527, 1989.
DOI
|
16 |
X.i Liu, X.Lua, R. Chuaic, C. Shi, C. Suo, "Polysilicon nanofilm pressure sensor", Sensors and Actuators, A 154, pp. 42-45, 2009.
DOI
|
17 |
V.A. Gridchin, V.M. Lubimsky, M.P. Sarina," Piezoresistive properties of polysilicon films", Sensors and Actuators A: Physical, Vol. 49, Issues 1-2, pp. 67-72, 1995.
DOI
|