• 한국결정성장학회지
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• 제26권3호
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Journal of Magnetics
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• 제18권2호
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• 한국결정성장학회지
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• 제17권5호
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• 한국표면공학회지
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• 제54권6호
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• pp.348-356
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• 2021

In this study, optical diagnosis of plasma was performed for nitrogen doping in graphene using a horizontal inductively coupled plasma (ICP) system. Graphene was prepared by mechanical exfoliation and the ICP system using nitrogen gas was ignited for plasma-induced and defect-suppressed nitrogen doping. In order to derive the optimum condition for the doping, plasma power, working pressure, and treatment time were changed. Optical emission spectroscopy (OES) was used as plasma diagnosis method. The Boltzmann plot method was adopted to estimate the electron excitation temperature using obtained OES spectra. Ar ion peaks were interpreted as a reference peak. As a result, the change in the concentration of nitrogen active species and electron excitation temperature depending on process parameters were confirmed. Doping characteristics of graphene were quantitatively evaluated by comparison of intensity ratio of graphite (G)-band to 2-D band, peak position, and shape of G-band in Raman profiles. X-ray photoelectron spectroscopy also revealed the nitrogen doping in graphene.

• 미생물학회지
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• 제54권4호
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• pp.309-319
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• 2018

이전의 연구에서 질소원이 존재하여도 페로몬을 유도하는 6개의 Schizosaccharomyces pombe 돌연변이체를 온도민감성 돌연변이체들의 저장고로부터 분리하였음이 보고된 바 있다. 본 연구에서는 이들 중 하나인 pws6 돌연변이체의 특성을 더 연구하였다. 이 돌연변이체는 영양물질에 특이적으로 페로몬 유도를 나타내었다. 즉 질소의 고갈은 없어도 M-factor 페로몬을 유도하였으나 탄소의 고갈이 없으면 유도되지 않았다. 이러한 결과는 pws6 돌연변이체가 질소 고갈을 전달하는 경로에 특이한 결함을 가지고 있음을 시사한다. 이 돌연변이체는 M-factor 페로몬뿐만 아니라 P-factor 페로몬도 온도에 민감한 양식으로 질소의 고갈 없이 유도함을 보여 주어 이 돌연변이체의 페로몬 유도는 세포 유형에 특이적이지 않음을 시사하였다. 이 돌연변이체의 온도 민감성 성장 결함의 상보적 보완에 의해 $pws6^+$ 유전자를 클로닝하여 8.1 kb, 3.3 kb, 그리고 4.8 kb 효모 DNA를 가진 3개의 플라스미드가 분리되었다. 이 플라스미드들은 pws6 돌연변이체의 성장 결함을 각각 100%, 70%, 그리고 10-20% 보완하였다. 또한 이 플라스미드들은 pws6 돌연변이체의 페로몬 유도 특성을 보완하는 능력을 가지고 있었으며 이는 돌연변이체의 성장 결함 보완 효율과 밀접한 연관성이 있음을 보여 주었다. 이들의 오픈 리딩 프레임을 성장 결함의 보완 효율과 비교하여 오픈 리딩 프레임 SPBC19C7.06이 pws6 돌연변이체의 온도 민감성 특성을 상보적으로 보완하는데 원인이 되는 리딩 프레임으로 결론 내렸다. 이 오픈 리딩 프레임은 prs1으로 명명되었으며 인트론이 없이 하나의 긴 엑손을 가지고 있는 추정된 prolyl tRNA synthetase를 암호화한다. 추정된 Prs1 단백질은 다른 종의 prolyl tRNA synthetase와 상당한 유사성을 보여 주었다.

• Journal of Magnetics
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• 제16권4호
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of Microbiology and Biotechnology
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• 제24권9호
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• pp.1207-1215
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• 2014

Candida albicans, the major human fungal pathogen, undergoes morphological transition from the budding yeast form to filamentous growth in response to nitrogen starvation. In this study, we identified a new function of GST2, whose expression was required for filamentous growth of C. albicans under nitrogen-limiting conditions. The Gst2p showed Gst activity and required response to oxidative stress. The ${\Delta}gst2$ mutant displayed predominantly yeast phase growth in low ammonium media. Such morphological defect of ${\Delta}gst2$ mutants was not rescued by overexpression of Mep2p, Cph1p, or Efg1p, but was rescued by either overexpression of a hyperactive $RAS1^{G13V}$ allele or through exogenous addition of cyclic AMP. In addition, the ${\Delta}gst2$ mutants had lower levels of RAS1 transcripts than wild-type cells under conditions of nitrogen starvation. These results were consistent with the Ras1-cAMP pathway as a possible downstream target of Gst2p. These findings suggest that Gst2p is a significant component of nitrogen starvation-induced filamentation in C. albicans.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 춘계학술발표대회
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• pp.414-417
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• 2000

기존의 BACC process의 가장 큰 단점은 탈질이 잘 이루어지지 않는다는 점인데 이것을 보완한 modified BACC process의 경우 실제오수를 사용하여 외부 반송비 따른 질소 및 인의 제거율을 살펴보면 외부 반송비가 200%일 때 $CODC_{Cr}$의 제거율은 평균 $96.3{\sim}95.7%$ 기존의 BACC process와 비슷하나 T-N 제거율은 $88.3{\sim}95.7%$로 월등히 우수한 결과를 보여주고 있다. 충진율 실험에서는 Table 2에서 보는 바와 같이 큰 차이는 없었다.

• 한국세라믹학회지
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• 제32권5호
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• pp.559-566
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• 1995

Alumina powder was coated with stearic acid and then mixed with isotactic polypropylene, atactic polypropylene as binders at 15$0^{\circ}C$ for 2 hours. The mixture was then injection molded at various mold temperatures using injection molding machine to investigate the effect of the molding temperature and debinding parameters on the formation of the defects. The molded specimens were debinded in both air and nitrogen atmospheres. Wicking and solvent methods were also used to enhance debinding efficiency. The specimens were prefired at 120$0^{\circ}C$ and then sintered at 150$0^{\circ}C$ for 3 hours. Various defects were formed at mold temoperature of 3$0^{\circ}C$, 6$0^{\circ}C$ and 10$0^{\circ}C$ and any noticeable defect was not formed at 85$^{\circ}C$. The density of green body increased with mold temperature. Debinding in air atmosphere was more effective than in nitrogen atmosphere. Results also proved that wicking and solvent treatments helped minimize the number of defects.