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http://dx.doi.org/10.4283/JMAG.2011.16.4.332

Effect on N Defect in Cu-doped III-nitride Semiconductors  

Kang, Byung-Sub (Department of Nano Science and Mechanical Engineering, Konkuk University)
Lee, Jae-Kwang (Department of Nano Science and Mechanical Engineering, Konkuk University)
Lim, Yong-Sik (Department of Nano Science and Mechanical Engineering, Konkuk University)
Song, Kie-Moon (Department of Nano Science and Mechanical Engineering, Konkuk University)
Chae, Kwang-Pyo (Department of Nano Science and Mechanical Engineering, Konkuk University)
Publication Information
Journal of Magnetics / v.16, no.4, 2011 , pp. 332-336 More about this Journal
Abstract
We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.
Keywords
Cu-doped III-nitrides; nitrogen defect; ferromagnetism;
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