• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Journal of Magnetics
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• v.18 no.2
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.348-356
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• 2021

In this study, optical diagnosis of plasma was performed for nitrogen doping in graphene using a horizontal inductively coupled plasma (ICP) system. Graphene was prepared by mechanical exfoliation and the ICP system using nitrogen gas was ignited for plasma-induced and defect-suppressed nitrogen doping. In order to derive the optimum condition for the doping, plasma power, working pressure, and treatment time were changed. Optical emission spectroscopy (OES) was used as plasma diagnosis method. The Boltzmann plot method was adopted to estimate the electron excitation temperature using obtained OES spectra. Ar ion peaks were interpreted as a reference peak. As a result, the change in the concentration of nitrogen active species and electron excitation temperature depending on process parameters were confirmed. Doping characteristics of graphene were quantitatively evaluated by comparison of intensity ratio of graphite (G)-band to 2-D band, peak position, and shape of G-band in Raman profiles. X-ray photoelectron spectroscopy also revealed the nitrogen doping in graphene.

• Korean Journal of Microbiology
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• v.54 no.4
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• pp.309-319
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• 2018

Previously, six Schizosaccharomyce pombe mutants that induce pheromone even in the presence of nitrogen source were isolated from a bank of temperature sensitive mutants. In this report, one of these mutants, pws6 was further characterized. The pheromone induction in pws6 mutant cells was specific to nutrient: the M-factor pheromone was induced without nitrogen starvation but not without glucose starvation. This result suggests that the pws6 mutant might have a specific defect in the pathway for nitrogen starvation. The pws6 mutant induces P-factor pheromone as well as M-factor without starvation of nitrogen in temperature sensitive mode, suggesting that the pheromone induction phenotype of pws6 mutation is not cell-type specific. From cloning of the $pws6^+$ gene by complementation of the temperature sensitive growth defect, three plasmids containing 8.1 kb, 3.3 kb, and 4.8 kb yeast DNA were recovered. These plasmids complement the growth defect of the pws6 mutant by 100%, 70%, and 10~20%, respectively. The abilities of these plasmids to complement pheromone induction phenotype of pws6 mutant cells were correlated well with the efficiencies of complementation of the growth defect. With comparison of their open reading frames to the complementation efficiencies, it is concluded that the open reading frame, SPBC19C7.06 is responsible for the complementation of temperature sensitive phenotype of the pws6 mutant. This open reading frame, named prs1, contains one long exon with no intron and encodes a putative prolyl tRNA synthetase. The putative Prs1 protein exhibits significant similarities to the prolyl tRNA synthetases of other species.

• Journal of Magnetics
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• v.16 no.4
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of Microbiology and Biotechnology
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• v.24 no.9
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• pp.1207-1215
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• 2014

Candida albicans, the major human fungal pathogen, undergoes morphological transition from the budding yeast form to filamentous growth in response to nitrogen starvation. In this study, we identified a new function of GST2, whose expression was required for filamentous growth of C. albicans under nitrogen-limiting conditions. The Gst2p showed Gst activity and required response to oxidative stress. The ${\Delta}gst2$ mutant displayed predominantly yeast phase growth in low ammonium media. Such morphological defect of ${\Delta}gst2$ mutants was not rescued by overexpression of Mep2p, Cph1p, or Efg1p, but was rescued by either overexpression of a hyperactive $RAS1^{G13V}$ allele or through exogenous addition of cyclic AMP. In addition, the ${\Delta}gst2$ mutants had lower levels of RAS1 transcripts than wild-type cells under conditions of nitrogen starvation. These results were consistent with the Ras1-cAMP pathway as a possible downstream target of Gst2p. These findings suggest that Gst2p is a significant component of nitrogen starvation-induced filamentation in C. albicans.

• 한국생물공학회:학술대회논문집
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• 2000.04a
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• pp.414-417
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• 2000

BACC(Biological Activated Carbon Cartridge)process is a newly developed biological process to remove organic compounds, nitrogen, and phosphorus with activated carbon granules in iron fixed-frame cartridge type. The largest defect of previous BACC process was denitrification inefficiency. The removal efficiencies of nitrogen and phosphorous with external recycle ratios $100{\sim}200%$ for synthetic wastewater were $69.8{\sim}90.1%$ and $62.18{\sim}91%$, respectively, since the modified BACC process with external recycle overcame the defect of BACC process. When external recycle ratio was increased more than 300%, T-N removal efficiencies were decreased. In the treatment of a real sewage using modified BACC process, $COD_{Cr}$, removal efficiencies were $96.3{\sim}97.5%$ which was similar to those of the previous BACC process. while T-N removal efficiencies was $88.3{\sim}95.7%$ which were superior to those of the previous BACC process.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.559-566
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• 1995

Alumina powder was coated with stearic acid and then mixed with isotactic polypropylene, atactic polypropylene as binders at 15$0^{\circ}C$ for 2 hours. The mixture was then injection molded at various mold temperatures using injection molding machine to investigate the effect of the molding temperature and debinding parameters on the formation of the defects. The molded specimens were debinded in both air and nitrogen atmospheres. Wicking and solvent methods were also used to enhance debinding efficiency. The specimens were prefired at 120$0^{\circ}C$ and then sintered at 150$0^{\circ}C$ for 3 hours. Various defects were formed at mold temoperature of 3$0^{\circ}C$, 6$0^{\circ}C$ and 10$0^{\circ}C$ and any noticeable defect was not formed at 85$^{\circ}C$. The density of green body increased with mold temperature. Debinding in air atmosphere was more effective than in nitrogen atmosphere. Results also proved that wicking and solvent treatments helped minimize the number of defects.