• Journal of the Korean Society for Heat Treatment
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• v.23 no.3
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• pp.150-155
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• 2010

Generally, plasma nitriding process has composed with a nitriding layer within glow discharge region occurred by energy exchange. The dissociations of nitrogen molecules are very difficult to make neutral atoms or ionic nitrogen species via glow discharge area. However, the captured electrons in which a double-folded screen with same potential cathode can stimulate and come out some single atoms or activated ionic species. It was showed an important thing that is called "hat is a dominant component in this nitriding process?" in plasma nitriding process and it can take an effective species for without compound layer. During a plasma nitriding process, it was able to estimate with analyzing and identification by optical emission spectroscopy (OES) study. And then we can make comparative studies on the nitrogen transfer with plasma nitriding and ATONA process using plasma diagnosis and metallurgical observation. From these observations, we can understand role of active species of nitrogen, like N, $N^+$, ${N_2}^+$, ${N_2}^*$ and $NH_x$-radical, in bulk plasma of each process. And the same time, during DC plasma nitriding and other processes, the species of FeN atom or any ionic nitride species were not detected by OES analyzing.

• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.211-216
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• 1983

This work aims at characterizing silicon grains and its compacts. In order to remove iron silicon grains were washed with 5N hydrochloride at 60-7$0^{\circ}C$ for 170 hrs, and then followed the chemical analysis by atomic absorption spectrophotometer X-ray diffraction analysis SEM observation and specific surface area determination by B. E. T. Mixtures of graded silicon particles with two or three different sizes were made into packings by mechanical vibration. The mixtures were used to make compacts with 10 mm in diameter and 70mm in length by isostatically pressing at 1, 208 kg/$cm^2$ (20 kpsi) and 4, 255kg/$cm^2$ (60 kpsi) respectively. Bulk densities of packings and compacts were measured. A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$ for the purpose of coating the uniform layer of magnesium oxide on the surface of particles. The results obtained are as follows: (1) About two thirds of iron content could be removed from silicon by washing silicon powders with hydrochloride. (2) Uniform layer of magnesium oxide on the surface of silicon could be prepared by spray-drying suspension and by decomposing it. (3) B. E. T. specific surface area of fine silicon particles was 2, 826.753$m^3$/kg. (4) In the binary system with two sizes of 40-53$\mu\textrm{m}$ particles and <10$\mu\textrm{m}$ particles the maximum bulk density of packing was 55% of theoretical value and that of compacts made at the pressure of 4, 255 kg./$cm^2$ (60 kpsi) was 73% of theoretical value. (5) In the ternary system with three sizes the maximum bulk density of packing was 1.43 g/$cm^3$and that of compacts was 1.80g/$cm^3$which is equivalent to 77.6% of theoretical value. The composition of the closest compact was consisted of 50% of 40-53$\mu\textrm{m}$ particles 20% of 10-30$\mu\textrm{m}$ particles and 30% of <10$\mu\textrm{m}$ parti-cles.

• Corrosion Science and Technology
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• v.9 no.1
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• pp.20-28
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• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.245-248
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• 2014

$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.221-227
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• 1997

The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.671-675
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• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.