Browse > Article
http://dx.doi.org/10.4313/TEEM.2014.15.5.245

Dependence of Electrons Loss Behavior on the Nitride Thickness and Temperature for Charge Trap Flash Memory Applications  

Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University)
Ma, Dongwei (College of Physics and Electronic Engineering, Anyang Normal University)
Jing, Zhang (College of Physics and Electronic Engineering, Anyang Normal University)
Jiang, Yunhong (College of Physics and Electronic Engineering, Anyang Normal University)
Wang, Guixia (College of Physics and Electronic Engineering, Anyang Normal University)
Li, Rong (School of Mathematics and Statistics, Anyang Normal University)
Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University)
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.5, 2014 , pp. 245-248 More about this Journal
Abstract
$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.
Keywords
Charge trapping; Electrons loss behavior; Memory device;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 J. H. Park, S. H. Hur, J. H. Lee, J. T. Park, J. S. Sel, J. W. Kim, S. B. Song, J. Y. Lee, J. H. Lee, S. J. Son, Y. S. Kim, M. C. Park, S. J. Chai, J. D. Choi, U. I. Chung, J. T. Moon, K. T. Kim, K. Kim, and B. I. Ryu, Tech. Dig. Int. Electron Devices Meet., 873 (2004). [DOI: http://dx.doi.org/10.1109/IEDM.2004.1419319 ].   DOI
2 Z. J. Tang, D. Q. Zhao, R. Li, and X. H. Zhu, Trans. Electr. Electron. Mater., 15, 16 (2014). [DOI: http://dx.doi.org/10.4313/TEEM.2014.15.1.16].   DOI   ScienceOn
3 Z. J. Tang, Z. G. Liu, and X. H. Zhu, Trans. Electr. Electron. Mater., 4, 155 (2010). [DOI: http://dx.doi.org/10.4313/TEEM.2010.11.4.155].   DOI   ScienceOn
4 L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett., 101, 033501 (2012). [DOI: http://dx.doi.org/10.1063/1.4737158].   DOI   ScienceOn
5 Y. H. Hsiao, H. T. Lue, T. H. Hsu, K. Y. Hsieh, and C. Y. Lu, Proc. IEEE Int. Memory Workshop, 1 (2010). [DOI: http://dx.doi.org/10.1109/IMW.2010.5488390 ].   DOI
6 S. H. Gu, D. W. Hsu, T. Wang, W. P. Lu, Y. H. J. Ku, and C. Y. Lu, IEEE Trans. Electron Devices, 54, 90 (2007). [DOI: http://dx.doi.org/10.1109/TED.2006.887219].   DOI   ScienceOn
7 A. Arreghini, G. S. Kar, G. Van den Bosch, and J. Van Houdt, IEEE Electron Device Lett., 35, 632 (2013). [DOI: http://dx.doi.org/10.1109/LED.2013.2253442].   DOI   ScienceOn
8 S. D. Tzeng and S. Gwo, J. Appl. Phys., 100, 023711 (2006). [DOI: http://dx.doi.org/10.1063/1.2218025].   DOI   ScienceOn
9 M. Chang, M. Jo, S. Kim, Y. Ju, S. Jung, J. Lee, J. Yoon, C. Lee, and H. Hwang, Appl. Phys. Lett., 93, 232105 (2008). [DOI: http://dx.doi.org/10.1063/1.3041642].   DOI   ScienceOn
10 C. L. Hinkle, C. Fulton, R. J. Nemanich and G. Lucovsky, Microelectronic Engineering, 72, 257 (2004). [DOI: http://dx.doi.org/10.1016/j.mee.2003.12.047].   DOI   ScienceOn
11 Y. Wang and M. H. White, Solid-State Electronics, 49, 97 (2005). [DOI: http://dx.doi.org/10.1016/j.sse.2004.06.009].   DOI   ScienceOn
12 T. H. Kim, J. S. Sim, J. D. Lee, H. C. Shim, and B. G. Park, Appl. Phys. Lett. , 85, 660 (2004). [DOI: http://dx.doi.org/10.1063/1.1773615].   DOI   ScienceOn
13 K. Bernert, C. Oestreich, J. Bollmann, and T. MikolajickI, Appl. Phys. A, 100, 249 (2010). [DOI: http://dx.doi.org/10.1007/s00339-010-5694-0].   DOI
14 Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, IEEE Trans. Electron Devices, 51, 1143 (2004). [DOI: http://dx.doi.org/10.1109/TED.2004.82986].   DOI   ScienceOn
15 A. Arreghini, N. Akil, F. Driussi, D. Esseni, L. Selmi, and M. J. van Duuren, Solid State Electron., 52, 1460 (2008). [DOI: http://dx.doi.org/10.1016/j.sse.2008.04.016].   DOI   ScienceOn