• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.81-85
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• 2004

Nanoporous materials with nanometer-sized pores, are of great interest in the various applications such as selective adsorbents, heterogeneous catalysts and catalyst supports because of their high porosity, surface area, and size selective adsorption properties. This study is aimed to prepare nanoporous catalytic materials on the basis of two-dimersional clay by pillaring of $SiO_2$ sol particles. $SiO_2$ Pillared Montmorillonite (Si-PILM) was prepared by ion exchanging the interlayer $Ni^{2+}$ ions of clay with $SiO_2$ nano-sized particles of which the surface was modified with nicked polyhydroxy cations sach as $Ni_4(OH)_4^{4+}$. Nano-sized $SiO_2$ particles were formed by the controlled hydrolysis of tetraethyl orthosilicate (TEOS). Upon pillaring of $Ni^+$-modified $SiO_2$ nano particles between the clay layers, the basal spacing was expanded largely to $45{\AA}$ and the extremely large specific surface area ($S_{BET}$) of $760m^2/g$ was obtained.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.233-239
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• 2002

Reflection properties of $SiO_2$/ITO (Indium Tin Oxide) thin films coated for electromagnetic shielding, anti-static and anti-reflection on the front surface in CRT were studied. The behavior of reflectance as a function of thickness of $SiO_2$/ITO was investigated and applied to theoretical anti0reflection model of double layers and three layers. As the thickness of ITO layer increased, the deviation from theoretical value increased because uniformity of film deteriorated by pore. Because of the effect of mixed layer of $SiO_2$ and ITO, experimental reflectance showed better acceptance to the three layer antireflection model of $SiO_2$/$SiO_2$+ITO/ITO than the two layer model. Based on the theoretical antireflection design, the double layer whose thickness of $SiO_2$ and ITO were 90, 65 nm, respectively appear 2.5% in reflectance at standard wavelength, 550 nm. This phenomenon was similar to theoretical reflectance in visual range.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.249-252
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• 2014

The aim of this work is to investigate the effect of $Ca_xSr_{2-x}$ and activator on the structural and luminescent properties of green-emitting $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ nano phosphor. Using urea as fuel and ammonium nitrate as oxidizer, $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ has been successfully synthesized, using a combustion method. The particles were found to be small, spherical and of round surface. SEM imagery showed that the phosphors particles are of nanosize. The $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ emission spectrum for 360 nm excitation showed a single band, with a peak at 490 nm, which is a green emission. The highest luminous intensity was at $1,000^{\circ}C$, which was obtained when the $Eu^{2+}$ content (y) was 0.05. The results support the application of $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). Characteristics of the synthesized $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) detection.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.297-301
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• 2004

Nano-sized mullite (3Al$_2$O$_3$$.$2SiO$_2$) colloids were prepared by use of the spray combustion method. For combustion reaction, Al(NO$_3$)$_3$$.$9$H_2O$, and CH$_{6}$N$_4$O were used as an oxidizer and a fuel respectively, and then colloidal silica was also added as 2SiO$_2$source for mullite. The temperature of the reaction chamber was kept at 80$0^{\circ}C$ to initiate the ignition of droplets of the mixed precursors. For preventing droplet coagulation, the droplet number concentration was reduced using the metal screen filter, and the residence time of aerosol was kept at 2.5 seconds for laminar flow. The synthesized colloidal particles had an uniform spherical shape with 130 nanometer size and the crystalline phase showed the mullite with stoichiometry in the observations of XRD and TEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.309-314
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• 2003

A spark plasma sintering technique has been used for the fabrication of $Al_2O_3$-SiC nanocomposites at the low temperature of $1100^{\circ}C$∼$1500^{\circ}C$. The sintered $Al_2O_3$-SiC composites shows very homogeneous microstructure without any particular abnormal grain growth, indicating that the addition of nano-sized SiC particles is very effective to control grain growth and to induce the residual stress in the $Al_2O_3$ matrix, resulting in the intragranular fracture. These SiC particles are present in the grain boundaries and also intragrain, depending on the sintering condition, and improve remarkably the mechanical properties of $Al_2O_3$-SiC composite through the mechanisms of strengthening and toughening induced by crack diffraction and crack bridging.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.902-910
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• 2018

In recent times, development of nanofluid insulation for power transformers is a hot research topic. Many researchers reported the enhancement in dielectric characteristics of nano modified mineral oils. Considering the drawbacks of petroleum based mineral oil, it is necessary to understand the dielectric characteristics of nanofluids developed with natural ester based oils. Palm oil has better insulation characteristics comparable to mineral oil. However very few research reports is available in the area of nanofluids based on palm oil. Partial discharge (PD) is one of the major sources of insulation performance degradation of transformer oil. It is essential to understand the partial discharge(PD) characteristics by collecting huge data base of PD performance of nano modified palm oil which will increase its confidence level for power transformer application. Knowing these facts, in the present work, certain laboratory experiments have been performed on PD characteristics of nano $SiO_2$ modified palm oil at different electrode configurations. Influence of concentration of nano filler material on the PD characteristics is also studied. Partial discharge inception voltage, Phase resolved partial discharge (PRPD) pattern, PD signal time-frequency domain characteristics, PD signal equivalent timelength-bandwidth mapping, Weibull distribution statistical parameters of PRPD pattern, skewness, repetition rate and phase angle variations are evaluated at different test conditions. From the results of the experiments conducted, we came to understand that PD performance of palm oil is considerably enhanced with the addition of $nano-SiO_2$ filler at 0.01%wt and 0.05%wt concentration. Significant reduction in PD inception voltage, repetition rate, Weibull shape parameter and PD magnitude are noticed with addition of $SiO_2$ nanofillers in palm oil. These results will be useful for recommending nano modified palm oil for power transformer applications.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1712-1719
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• 2015

In recent days, there was a significant development on the electrical, thermal, mechanical, physical, chemical, magnetic and optical properties of the polyamide enamel, varnish and other insulating materials by the addition of nano fillers to it. Enamel was used in High Voltage Apparatuses used in Medical Electronics as insulation. Insulating materials determine the life time of the electrical apparatuses. The life time of the insulating materials was improved by the addition of nano fillers to it. Hence the life time of the electrical apparatuses was improved by the mixing of nano fillers to the enamel. In this research, the basic dielectric properties of the enamel and enamel mixed with nano composites of silica and alumina were analyzed and compared with each other. The addition of nano fillers has improved the quality factor and capacitance of the enamel. It was also observed that the addition of nano fillers has reduced the dissipation factor and dielectric losses of the enamel. Heat produced by the dielectric losses was also reduced by adding nano fillers to it.