• Title/Summary/Keyword: n-i-p-i-n

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GENERALIZED LOCAL COHOMOLOGY AND MATLIS DUALITY

  • Abbasi, Ahmad
    • 호남수학학술지
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    • 제30권3호
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    • pp.513-519
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    • 2008
  • Let (R, m) be a Noetherian local ring with maximal ideal m, E := $E_R$(R/m) and let I be an ideal of R. Let M and N be finitely generated R-modules. It is shown that $H^n_I(M,(H^n_I(N)^{\vee})){\cong}(M{\otimes}_RN)^{\vee}$ where grade(I, N) = n = $cd_i$(I, N). We also show that for n = grade(I, R), one has $End_R(H^n_I(P,R)^{\vee}){\cong}Ext^n_R(H^n_I(P,R),P^*)^{\vee}$.

AN ANALOGUE OF THE HILTON-MILNER THEOREM FOR WEAK COMPOSITIONS

  • Ku, Cheng Yeaw;Wong, Kok Bin
    • 대한수학회보
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    • 제52권3호
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    • pp.1007-1025
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    • 2015
  • Let $\mathbb{N}_0$ be the set of non-negative integers, and let P(n, l) denote the set of all weak compositions of n with l parts, i.e., $P(n,l)=\{(x_1,x_2,{\cdots},x_l){\in}\mathbb{N}^l_0\;:\;x_1+x_2+{\cdots}+x_l=n\}$. For any element $u=(u_1,u_2,{\cdots},u_l){\in}P(n,l)$, denote its ith-coordinate by u(i), i.e., $u(i)=u_i$. A family $A{\subseteq}P(n,l)$ is said to be t-intersecting if ${\mid}\{i:u(i)=v(i)\}{\mid}{\geq}t$ for all $u,v{\epsilon}A$. A family $A{\subseteq}P(n,l)$ is said to be trivially t-intersecting if there is a t-set T of $[l]=\{1,2,{\cdots},l\}$ and elements $y_s{\in}\mathbb{N}_0(s{\in}T)$ such that $A=\{u{\in}P(n,l):u(j)=yj\;for\;all\;j{\in}T\}$. We prove that given any positive integers l, t with $l{\geq}2t+3$, there exists a constant $n_0(l,t)$ depending only on l and t, such that for all $n{\geq}n_0(l,t)$, if $A{\subseteq}P(n,l)$ is non-trivially t-intersecting, then $${\mid}A{\mid}{\leq}(^{n+l-t-l}_{l-t-1})-(^{n-1}_{l-t-1})+t$$. Moreover, equality holds if and only if there is a t-set T of [l] such that $$A=\bigcup_{s{\in}[l]{\backslash}T}\;A_s{\cup}\{q_i:i{\in}T\}$$, where $$A_s=\{u{\in}P(n,l):u(j)=0\;for\;all\;j{\in}T\;and\;u(s)=0\}$$ and $$q_i{\in}P(n,l)\;with\;q_i(j)=0\;fo\;all\;j{\in}[l]{\backslash}\{i\}\;and\;q_i(i)=n$$.

The deformation space of real projective structures on the $(^*n_1n_2n_3n_4)$-orbifold

  • Lee, Jungkeun
    • 대한수학회보
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    • 제34권4호
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    • pp.549-560
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    • 1997
  • For positive integers $n_i \geq 2, i = 1, 2, 3, 4$, such that $\Sigma \frac{n_i}{1} < 2$, there exists a quadrilateral $P = P_1 P_2 P_3 P_4$ in the hyperbolic plane $H^2$ with the interior angle $\frac{n_i}{\pi}$ at $P_i$. Let $\Gamma \subset Isom(H^2)$ be the (discrete) group generated by reflections in each side of $P$. Then the quotient space $H^2/\gamma$ is a differentiable orbifold of type $(^* n_1 n_2 n_3 n_4)$. It will be shown that the deformation space of $Rp^2$-structures on this orbifold can be mapped continuously and bijectively onto the cell of dimension 4 - \left$\mid$ {i$\mid$n_i = 2} \right$\mid$$.

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Oscillations of Difference Equations with Several Terms

  • Ocalan, Ozkan
    • Kyungpook Mathematical Journal
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    • 제46권4호
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    • pp.573-580
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    • 2006
  • In this paper, we obtain sufficient conditions for the oscillation of every solution of the difference equation $$x_{n+1}-x_n+\sum_{i=1}^{m}p_ix_{n-k_i}+qx_{n-z}=0,\;n=0,1,2,{\cdots},$$ where $p_i{\in}\mathbb{R}$, $k_i{\in}\mathbb{Z}$ for $i=1,2,{\cdots},m$ and $z{\in}\{-1,0\}$. Furthermore, we obtain sufficient conditions for the oscillation of all solutions of the equation $${\Delta}^rx_n+\sum_{i=1}^{m}p_ix_{n-k_i}=0,\;n=0,1,2,{\cdots},$$ where $p_i{\in}\mathbb{R}$, $k_i{\in}\mathbb{Z}$ for $i=1,2,{\cdots},m$. The results are given terms of the $p_i$ and the $k_i$ for each $i=1,2,{\cdots},m$.

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ON THE PRECISE ASYMPTOTICS IN COMPLETE MOMENT CONVERGENCE OF NA SEQUENCES

  • Han, Kwang-Hee
    • Journal of applied mathematics & informatics
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    • 제28권3_4호
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    • pp.977-986
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    • 2010
  • Let $X_1$, $X_2$, $\cdots$ be identically distributed negatively associated random variables with $EX_1\;=\;0$ and $E|X_1|^3$ < $\infty$. In this paper we prove $lim_{{\epsilon\downarrow}0}\;\frac{1}{-\log\;\epsilon}\sum\limits_{n=1}^\infty\frac{1}{n^2}ES_n^2I\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;2$ and $lim_{\epsilon\downarrow0}\;\epsilon^{2-p}\sum\limits_{n=1}^\infty\frac{1}{n^p}$ $E|S_n|^pI\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;\frac{2}{2-p}$ for 0 < p < 2, where $S_n\;=\;\sum\limits_{i=1}^{n}X_i$ and 0 < $\sigma^2\;=\;EX_1^2\;+\;\sum\limits_{i=2}^{\infty}Cov(X_1,\;X_i)$ < $\infty$. We consider some results of i.i.d. random variables obtained by Liu and Lin(2006) under negative association assumption.

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

  • Narang, Rakhi;Saxena, Manoj;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권3호
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    • pp.224-236
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    • 2013
  • This work presents a comparative study of four Double Gate tunnel FET (DG-TFET) architectures: conventional p-i-n DG-TFET, p-n-p-n DG-TFET, a gate dielectric engineered Heterogate (HG) p-i-n DG-TFET and a new device architecture with the merits of both Hetero Gate and p-n-p-n, i.e. HG p-n-p-n DG-TFET. It has been shown that, the problem of high gate capacitance along with low ON current for a p-i-n TFET, which severely hampers the circuit performance of TFET can be overcome by using a p-n-p-n TFET with a dielectric engineered Hetero-gate architecture (i.e. HG p-n-p-n). P-n-p-n architecture improves the ON current and the heterogeneous dielectric helps in reducing the gate capacitance and suppressing the ambipolar behavior. Moreover, the HG architecture does not degrade the output characteristics, unlike the gate drain underlap architecture, and effectively reduces the gate capacitance.

On the symmetric sierpinski gaskets

  • Song, Hyun-Jong;Kang, Byung-Sik
    • 대한수학회논문집
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    • 제12권1호
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    • pp.157-163
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    • 1997
  • Based on a n-regular polygon $P_n$, we show that $r_n = 1/(2 \sum^{[(n-4)/4]+1}_{j=0}{cos 2j\pi/n)}$ is the ratio of contractions $f_i(1 \leq i \leq n)$ at each vertex of $P_n$ yielding a symmetric gasket $G_n$ associated with the just-touching I.F.S. $g_n = {f_i $\mid$ 1 \leq i \leq n}$. Moreover we see that for any odd n, the ratio $r_n$ is still valid for just-touching I.F.S $H_n = {f_i \circ R $\mid$ 1 \leq i \leq n}$ yielding another symmetric gasket $H_n$ where R is the $\pi/n$-rotation with respect to the center of $P_n$.

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ASA 프로그램을 이용한 박막태양전지 구조설계 최적화

  • 백승신;최형욱;이영석;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.37-37
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    • 2009
  • 박막태양전지는 p-i-n substrate형과 n-i-p substrate형 두가지구조로 제조된다. 각 layer에서 activation energy와 band gap energy를 ASA simulator를 통해 조절해보았다. Simulation결과 p-i-n substrate형에서 p-layer와 n-i-p substrate형 n-layer에서 동일하게 activation energy 0.2eV, band gap energy 1.80eV에 최고효율 나왔고 각각 10.07%, 10.17%의 최고효율을 구할 수 있었다. 최적화 과정을 통하여 같은 조건에서 p-i-n substrate형 보다 n-i-p substrate형이 보다 높은 효율을 낸다는 것을 알 수 있었으며 본 연구를 통해 각 구조의 차이를 알 수 있었고 이는 높은 효율의 박막태양전지 설계에 도움이 될 것 이다.

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APPROXIMATION OF CONVEX POLYGONS

  • Lee, Young-Soo
    • Journal of applied mathematics & informatics
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    • 제10권1_2호
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    • pp.245-250
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    • 2002
  • Consider the Convex Polygon Pm={Al , A2, ‥‥, Am} With Vertex points A$\_$i/ = (a$\_$i/, b$\_$i/),i : 1,‥‥, m, interior P$\^$0/$\_$m/, and length of perimeter denoted by L(P$\_$m/). Let R$\_$n/ = {B$_1$,B$_2$,‥‥,B$\_$n/), where B$\_$i/=(x$\_$i/,y$\_$I/), i =1,‥‥, n, denote a regular polygon with n sides of equal length and equal interior angle. Kaiser[4] used the regular polygon R$\_$n/ to approximate P$\_$m/, and the problem examined in his work is to position R$\_$n/ with respect to P$\_$m/ to minimize the area of the symmetric difference between the two figures. In this paper we give the quality of a approximating regular polygon R$\_$n/ to approximate P$\_$m/.

비정질 실리콘을 이용한 방사선 계측시 Photoconductive Gain의 특성

  • 이형구;신경섭
    • 대한의용생체공학회:의공학회지
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    • 제18권3호
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    • pp.307-313
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    • 1997
  • 비정질 실리콘에서의 photoconductive gain mechanism을 방사선 계측시 이용하기 위한 연구를 수행하였다. p-i-n, n-i-n, n-i-p-i-n과 같은 여러 형태의 비정질 실리콘 계측기를 제작하고 시험하였다. Photoconductive gain은 두 가지의 시간적 범위에서 측정하였다. : 하나는 고에너지의 하전입자나 감마선의 통과를 모사하기 위해서 $1{\mu }$ sec 보다 짧은 가시광선 펄스를 사용하였고, 다른 하나는 의학영상에 사용되는 x-선을 모사하기 위하여 보다 긴 1msec 정도의 가시광선 펄스를 사용하였다. 두 가지의 photoconductive gain-current gain과 charge gain-을 정의하여 실험하였으며, charge gain은 current gain을 시간에 따라 적분한 값이다. 10 mA/$cm^2$의 dark current density level에서, 짧은 펄스에 대해서는 3~9정도의 charge gain을 얻을 수 있었고 긴 펄스에 대해서는 수백의 charge gain을 얻을 수 있었다. 여러 가지의 gain에 대한 결과를 계측기의 구조, 부가전압, dark current density와의 관계를 통하여 논의하였다.

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