• Macromolecular Research
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• 제15권1호
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• pp.5-9
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• 2007

The attenuated total reflection infrared (ATR-IR) spectra of trans-polyacetylene (trans-PA) film doped with sodium (n-doping) were observed in the range of 1900 to $700cm^{-1}$. The observed IR bands were attributed to negatively charged domains created by n-doping electrons. The doping-induced IR bands showed considerable difference from its pristine film. After doping, the out-of-plane CH deformation band of the strong $1010cm^{-1}$ region in the pristine film disappeared while several new bands were observed at 1600 (due to C=C stretching), 1400 (due to in-plane CH bending), 1290 and 1174 (due to CH stretching), and $880cm^{-1}$ (due to CC stretching) regions for Na-doped PA. In particular, a weak band of C=C stretching at $1600cm^{-1}$ was newly obtained for the first time in the present study. The electro conductivity of the doped trans-PA film was $10^2S/cm$ and the origins of doping-induced IR bands are discussed in terms of solitons and polarons.

• Progress in Superconductivity
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• 제14권1호
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• pp.17-23
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• 2012

The heavy-fermion compound $CeRhIn_5$ is a prototypical antiferromagnet where Ce 4f moments align antiferromagnetically below 3.8 K. When doped with Hg, the antiferromagnetic transition $T_N$ initially decreases, becomes flat, and increases again with further increasing Hg concentration. Here we report pressure effects on the electrical resistivity of a 0.45 % Hg-doped $CeRhIn_5$, where $T_N$ is 3.4 K and the magnetic structure is same as that of the undoped compound with Q=(1/2, 1/2, 0.298). With increasing pressure, $T_N$ is suppressed and a superconducting state emerges. The temperature dependence of the electrical resistivity near an optimal pressure shows a power-law behavior that deviates from a $T^2$ dependence, indicating presence of abundant quantum fluctuations near the optimal pressure.

• 한국결정성장학회지
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• 제9권1호
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• pp.39-42
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• 1999

N-도핑된 3C-SiC (N-SiC(3C))을 화학기상증착(CVD)으로 $1250^{\circ}C$에서 Si(111) 기판 위에 tetramethylsilane(TMS)를 열분해하여 성장하였다. 수송가스는 $H_{2}$이었고, N-SiC(3C) 에피층은 CVD로 성장되는 동안 $NH_{3}$에 의하여 n-형으로 도핑되었다. N-SiC(3C)의 물리적 특성은 적외선 분광(FTIR), X-선 회절(XRD), 라만 스펙트럼(Raman spectrum), 단면 투과전자영상(XTEM), Hall 측정 및 p/n 다이오드의 전압-진압(I-V) 특성에 의하여 조사되었다. N-도핑된 SiC(3C) 에피층의 전도형은 n-형이었고, 전도형은 $NH_{3}$를 사용한 N-dopant에 의하여 저온에서 잘 조절될 수 있다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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• pp.287-304
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• 1986

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.527-528
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• 2017

터널 전계 효과 트랜지스터(tunnel field effect transistor; TFET)의 게이트를 소스 영역으로 오버랩 시킨 구조에서 가우시안으로 P형 도핑한 경우의 전류특성을 조사했다. 제안된 구조는 채널을 P형 도핑하여 험프를 제거하고 가우시안 도핑하여 드레인 벌크영역에서 나타나는 역방향성(ambipolar) 전류를 최소화시켰다. 소스-채널-드레인을 P-P-N으로 구성된 TFET의 구동전류는 P-I-N TFET와 동일하나 문턱전압 이하 기울기(Subthreshold Swing; SS)에서 5배 높은 효율이 관찰되었으며 차단전류는 가우시안 도핑 결과가 일정한 도핑에 비해 약 10배 감소하였고, 역방향성 전류는 100배 감소하였다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.406-409
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• 2012

Recently, enormous research efforts have been focused on the development of non-precious catalysts to replace Pt for electrocatalytic oxygen reduction reaction (ORR), and to reduce the cost of proton exchange membrane fuel cells (PEMFCs). In recent years, heteroatom (N, B, and P) doped carbon nanostructures have been received enormous importance as a non-precious electrode materials for oxygen reduction. Doping of foreign atom into carbon is able to modify electronic properties of carbon materials. In this study, nitrogen and boron doped carbon nanostructures were synthesized by using a facile and cost-effective thermal annealing route and prepared nanostructures were used as a non-precious electrocatalysts for the ORR in alkaline electrolyte. The nitrogen doped carbon nanocapsules (NCNCs) exhibited higher activity than that of a commercial Pt/C catalyst, excellent stability and resistance to methanol oxidation. The boron-doped carbon nanostructure (BC) prepared at $900^{\circ}C$ showed higher ORR activity than BCs prepared lower temperature (800, $700^{\circ}C$). The heteroatom doped carbon nanomaterials could be promising candidates as a metal-free catalysts for ORR in the PEMFCs.

• 한국물환경학회지
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• 제26권4호
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• pp.707-712
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• 2010

Nitrogen-doped $TiO_2$ particles have been successfully prepared using titanium tetraisopropoxide as the Ti source and urea as the nitrogen source. As-prepared nitrogen-doped $TiO_2$ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmett-Teller method (BET) and ultraviolet-visible light (UV-vis) absorption spectra techniques. Photocatalytic degradation of Methylene Blue (MB) has been carried out in both solar light (UV-vis) and the visible region (${\lambda}=420nm$). Nitrogen-doped $TiO_2$ exhibits higher activity than the commercial $TiO_2$ photocalyst, particularly under visible-light irradiation because bandgap of nitrogen-doped $TiO_2$ becomes remarkably decreased.

• 전자공학회논문지A
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• 제31A권6호
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• pp.107-116
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• 1994

In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.