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Pressure Effects on the Hg-doped Heavy-fermion Superconductor $CeRhIn_5$  

Seo, S. (Department of Physics, Sungkyunkwan University)
Ju, S. (Department of Physics, Sungkyunkwan University)
Bauer, E.D. (Los Alamos National Laboratory)
Thompson, J.D. (Los Alamos National Laboratory)
Park, T. (Department of Physics, Sungkyunkwan University)
Publication Information
Progress in Superconductivity / v.14, no.1, 2012 , pp. 17-23 More about this Journal
Abstract
The heavy-fermion compound $CeRhIn_5$ is a prototypical antiferromagnet where Ce 4f moments align antiferromagnetically below 3.8 K. When doped with Hg, the antiferromagnetic transition $T_N$ initially decreases, becomes flat, and increases again with further increasing Hg concentration. Here we report pressure effects on the electrical resistivity of a 0.45 % Hg-doped $CeRhIn_5$, where $T_N$ is 3.4 K and the magnetic structure is same as that of the undoped compound with Q=(1/2, 1/2, 0.298). With increasing pressure, $T_N$ is suppressed and a superconducting state emerges. The temperature dependence of the electrical resistivity near an optimal pressure shows a power-law behavior that deviates from a $T^2$ dependence, indicating presence of abundant quantum fluctuations near the optimal pressure.
Keywords
$CeRhIn_5$; Hg doped $CeRhIn_5$; pressure; heavy fermion superconductor; quantum critical point;
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