• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.232-235
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• 2008

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$, $Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution, Bi substitution induced grain growth and increase of sinterablity, And also, Bi substitution suppress secondary phase due to the liquid phase sintering effect. Bi substitution enhanced electromechanical coupling factor ($k_p$) and dielectric constant ($\varepsilon_r$), However, mechanical quality factor($Q_m$) was deteriorated, At the sintering temperature of 870 $^{\circ}C$ and Bi substitution of 1 mol%, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant ($\varepsilon_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum values of 7,878 $g/cm^3$, 0,608, 835, 1603 and 397 pC/N, respectively for multilayer piezoelectric actuator application.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• Research in Plant Disease
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• v.24 no.2
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• pp.99-112
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• 2018

Certain agrochemicals may be tuned for increased effectiveness when downsized to nanoparticles (NPs), where one dimension is less than 100 nm. The NPs may function as fertilizers, pesticides and products to improve plant health through seed priming, growth promotion, and induction of systemic tolerance to stress. Formulations will allow targeted applications with timed release, reducing waste and pollution when compared to treatments with bulk-size products. The NPs may be a single component, such as nano-ZnO as a fertilizer, or be composites of compatible materials, for example where N, P, and K plus micronutrients are available. The active materials could be loaded into porous carriers or tethered to base nanostructures. Coatings could include such natural products alginate, chitosan, zein, or silica. Certain NPs are taken up and transported in the plant's phloem and xylem so systemic effects are feasible. Timed and targeted release of the active product could be achieved in response to changes in pH or availability of ligands within the plant or the rhizosphere. Global research has revealed the many potentials offered by NP formulations to aid sustainability in agriculture. Current work will provide information needed by regulatory agencies to assess their safety in the agricultural setting.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.373-373
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• 2011

$Cu(In,Ga)Se_2$(CIGS) 박막 태양전지는 Chalcopyrite계 박막 태양전지로 Cu, In, Ga, Se 각 원소의 조성을 적절히 조절하여 박막을 성장시킨다. 성장시킨 CIGS 박막은 광흡수계수가 105cm-1로 다른 물질 보다 뛰어나고 직접 천이형 반도체로서 얇은 두께로도 고효율의 박막 제작이 가능하다. 얇은 두께로도 충분히 빛의 흡수가 가능하지만, cell 표면 반사에 의한 광 손실은 cell 효율을 떨어뜨리게 된다. 본 연구에서는 CIGS 박막 태양전지의 광 흡수 향상을 위해 굴절률이 1.86인 ITO 위에 ITO보다 굴절률이 작은 $MgF_2$ (n=1.377) [1]를 80, 100, 120, 140 nm로 증착하여 $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/SLG 시료를 제작하고, optical reflectance, Quantum Efficiency를 이용하여 분석하였다. optical reflectance 분석 결과, $MgF_2$ AR coating을 한 경우, 두께가 두꺼워짐에 따라 광 반사도가 감소하는 경향을 보였다. 또한 AR coating 두께가 커짐에 따라 fluctuation이 점점 커지며, 파형이 장파장 쪽으로 shift하는 것을 관찰 할 수 있었다. Quantum efficiency (QE)를 분석한 결과 $MgF_2$ AR coating 할 경우, 측정된 대부분의 파장에서 QE가 향상되는 것을 확인할 수 있었다. 하지만 AR coating 두께에 따른 변화는 뚜렷한 차이를 보이지 않았다. AR coating 결과, JSC가 증가하여 efficiency가 향상되는 것을 확인 할 수 있다. 그러나 $MgF_2$ AR coating 80~140 nm 범위에서 cell 효율 변화의 뚜렷한 차이는 관찰할 수 없었다.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.247-253
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• 2010

The characteristics of selective oxidation prior to hot-dip galvanizing with the annealing atmosphere dew point and chemical composition in dual-phase steels and their effect on the inhibition layer formation relevant to coating adhesion have been studied using a combination of electron microscopic and surface analytical techniques. The annealed and also galvanized samples of 3 kinds of Si/Mn ratios with varied amounts of Si addition were prepared by galvanizing simulator. The dew point was controlled at soaking temperature $800^{\circ}C$ in 15%$H_2$ -85%$N_2$ atmosphere. It was shown that good adhesion factors were mainly uniformity of oxide particle distribution of low number density and low Si/Mn ratio prior to hot-dip galvanizing. Their effect was the greatly reduced coating bare spots and the formation of uniform inhibition layer leading to good adhesion of Zn overlay. The mechanism of good adhesion is suggested by two processes: the formation of inhibition layer on the oxide free surface uncovered with no $SiO_2$-containing particles in particular, and the inhibition layer bridging of oxide particles. The growth of inhibition layer was enhanced markedly by the delayed reaction of Fe and Al with the increase of Si/Mn ratio.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1519-1520
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• 2006

This paper describes a selection and application recommendations of ZnO arresters on DC electric traction vehicles. We measured and analyzed the system voltages applied to arresters and the surge currents flowing arresters on DC electric traction vehicles under operation to decide the Continuous Operating Voltage($U_C$), the Rated Voltage($U_R$), and the Nominal Discharge Current($I_n$). System voltages measured up to 1,800 V during anti-breaking in 1,500 V-system, and surge currents were recorded up to 3 times per running-service-route and their magnitudes were ranges of $150A{\sim}2kA$. From these results and the standard EN50163, we proposed the Continuous Operating Voltage($U_C$) the Rated Voltage($U_R$) for the $1,500V_{dc}$ electric traction vehicles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.277-278
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• 2007

In this study, in order to develop multilayer piezo-actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3,\;Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution. Bi substitution enhanced electromechanical coupling factor$(k_p)$ and dielectric constant$({\varepsilon}_r)$. However, mechanical quality factor was deteriorated. At the sintering temperature of $870^{\circ}C$ and Bi substitution of 1mol%, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, Dielectric constant$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $7.878g/cm^3$, 0.608, 835, 1603 and 397pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.59-61
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• 2005

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $Pb[(Mn_{1/3},Nb_{2/3})_{0.07}(Zn_{1/3}Nb_{2/3})_a(Zr_{0.48}Ti_{0.52})_{1-0.07-a}O_3]$ ceramics were manufactured with the variations of PZN from 2 to 14mol% and their dielectric and piezoelectric properties were investigated. Sintering temperature was varied from 910 to $1000^{\circ}C$. At 8mol% PZN substituted specimen sintered at $970^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant and peizoelectric constant($d_{33}$) showed the optimal values of 0.536, 1803, 1551 and 328[pC/N), respectively, for multilayer piezoelectric transformer application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.487-494
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• 2021

Piezoelectric generators use direct piezoelectric effects that convert mechanical energy into electrical energy. Many studies were attempted to fabricate piezoelectric generators using piezoelectrics such as ZnO, PZT, PVDF. However, these various inorganic/organic piezoelectric materials are not suitable for bio-implantable devices due to problems such as brittleness, toxicity, bio-incompatibility, bio-degradation. Thus, in this paper, piezoelectric generators were prepared using a silk fibroin film which is bio-compatible by dip-coating method. The silk fibroin films are a mixed state of silk I and silk II having stable β-sheet type structures and shows the d₃₃ value of 8~10 pC/N. There was a difference in output voltages according to the thickness. The silk fibroin generators, coated 10 times and 20 times, revealed the power density of 16.07 μW/cm² and 35.31 μW/cm² using pushing tester, respectively. The silk fibroin generators are sensitive to various pressure levels, which may arise from body motions such as finger tapping, foot pressing, wrist shaking, etc. The silk fibroin piezoelectric generators with bio-compatibility shows the applicability as a low-power implantable piezoelectric generator, healthcare monitoring service, and biotherapy devices.